Effect of Nitrogen Gas Pressure on Properties of Sputtered Layer-based Au/ZnO/Si/Au Photodiode: Occurrence of p-type ZnO Semiconductor Material.
Saved in:
| Title: | Effect of Nitrogen Gas Pressure on Properties of Sputtered Layer-based Au/ZnO/Si/Au Photodiode: Occurrence of p-type ZnO Semiconductor Material. |
|---|---|
| Authors: | Benhaliliba, M.1 (AUTHOR) mbenhalilba@gmail.com, Benouis, C. E.1 (AUTHOR) |
| Source: | Semiconductors. Oct2024, Vol. 58 Issue 10, p750-761. 12p. |
| Subjects: | DC sputtering, Open-circuit voltage, Zinc oxide films, P-type semiconductors, Semiconductor materials, Photoelectricity |
| Abstract: | A photodiode based on zinc oxide is fabricated using a direct current DC sputtering system. The effect of the nitrogen (N) ratio to argon (Ar) on photoelectrical properties is investigated via current-voltage characteristics. The nitrogen is varied within the 0–100 cm3 range, while the argon is maintained constant during the deposition process. The Au/ZnO:N/nSi/Au photodiode exhibited a high rectification factor around 105. According to high obtained value of ideality factor n ~3 a non-ideal behavior of Au/ZnO:N/nSi/Au photodiode is revealed. Saturation current (Is) and barrier height (φB) are found to be around 1 nA and 0.84 eV, respectively. Besides, the series resistance of 100 Ω is calculated by Cheung method. The Au/ZnO:N/nSi/Au heterostructure exhibited a high photosensitivity of 104. The sputtered as-grown ZnO films on glass are characterized by SEM and EDX facilities. The grain sizes are found to be around 24 nm. [ABSTRACT FROM AUTHOR] |
| Copyright of Semiconductors is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
|
Full text is not displayed to guests.
Login for full access.
|
|
| Abstract: | A photodiode based on zinc oxide is fabricated using a direct current DC sputtering system. The effect of the nitrogen (N) ratio to argon (Ar) on photoelectrical properties is investigated via current-voltage characteristics. The nitrogen is varied within the 0–100 cm3 range, while the argon is maintained constant during the deposition process. The Au/ZnO:N/nSi/Au photodiode exhibited a high rectification factor around 105. According to high obtained value of ideality factor n ~3 a non-ideal behavior of Au/ZnO:N/nSi/Au photodiode is revealed. Saturation current (Is) and barrier height (φB) are found to be around 1 nA and 0.84 eV, respectively. Besides, the series resistance of 100 Ω is calculated by Cheung method. The Au/ZnO:N/nSi/Au heterostructure exhibited a high photosensitivity of 104. The sputtered as-grown ZnO films on glass are characterized by SEM and EDX facilities. The grain sizes are found to be around 24 nm. [ABSTRACT FROM AUTHOR] |
|---|---|
| ISSN: | 10637826 |
| DOI: | 10.1134/S1063782624600803 |
