Benhaliliba, M., & Benouis, C. E. (2024). Effect of Nitrogen Gas Pressure on Properties of Sputtered Layer-based Au/ZnO/Si/Au Photodiode: Occurrence of p-type ZnO Semiconductor Material. Semiconductors, 58(10), 750. https://doi.org/10.1134/S1063782624600803
Chicago Style (17th ed.) CitationBenhaliliba, M., and C. E. Benouis. "Effect of Nitrogen Gas Pressure on Properties of Sputtered Layer-based Au/ZnO/Si/Au Photodiode: Occurrence of P-type ZnO Semiconductor Material." Semiconductors 58, no. 10 (2024): 750. https://doi.org/10.1134/S1063782624600803.
MLA (9th ed.) CitationBenhaliliba, M., and C. E. Benouis. "Effect of Nitrogen Gas Pressure on Properties of Sputtered Layer-based Au/ZnO/Si/Au Photodiode: Occurrence of P-type ZnO Semiconductor Material." Semiconductors, vol. 58, no. 10, 2024, p. 750, https://doi.org/10.1134/S1063782624600803.