Photoelectric characteristic of single-phase InxGa1-xN films with tunable bandgap through RF magnetron sputtering.
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| Title: | Photoelectric characteristic of single-phase In |
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| Authors: | Li, Ziyuan1 (AUTHOR), Shen, Longhai1 (AUTHOR) shenlonghai@163.com, Zhou, Ouxiang1 (AUTHOR), Zhu, Xiaotian1 (AUTHOR), Zhang, Yu1 (AUTHOR), Wang, Quhui1 (AUTHOR), Qi, Dongli1 (AUTHOR), Zhang, Xinglai2 (AUTHOR), Han, Mengyao1 (AUTHOR), Xu, Junhao1 (AUTHOR), Chen, Ye1 (AUTHOR), Li, Yuhao1 (AUTHOR) |
| Source: | Journal of Materials Science. Dec2024, Vol. 59 Issue 47, p21828-21845. 18p. |
| Subjects: | Radiofrequency sputtering, Radio frequency, Phase separation, Surface morphology, Photoluminescence, Photoelectricity, Magnetron sputtering |
| Abstract: | InxGa1-xN films with tunable bandgap hold significant potential for photoelectric applications, particularly in wavelength-selective and UV–visible photodetection. Herein, a unique target was designed to prepare bandgap-tunable InxGa1-xN films by RF (radio frequency) magnetron sputtering. By adjusting the RF power to change the In content (x value), we prepared InxGa1-xN films with bandgap variations in the range of 2.15–2.63 eV. Upon further investigation, it was found that the grown InxGa1-xN films had hexagonal structure and did not undergo phase separation in the In-rich composition. With the increase of In content from 0.46 to 0.60, the preferred orientation of the InxGa1-xN films changed from (101) to (100) plane, while the surface morphology of the InxGa1-xN films changed from worm-like to spherical grains. Photoluminescence peaks of InxGa1-xN films was composed of intrinsic and defect luminescence. Under irradiation of 450 and 650 nm laser, the responsivity of the InxGa1-xN metal–semiconductor-metal photodetector can reach 5.15 × 10−7 and 3.2 × 10−7 A/W, and the fastest response time can reach 1.28 and 1.32 s, respectively. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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| Abstract: | InxGa1-xN films with tunable bandgap hold significant potential for photoelectric applications, particularly in wavelength-selective and UV–visible photodetection. Herein, a unique target was designed to prepare bandgap-tunable InxGa1-xN films by RF (radio frequency) magnetron sputtering. By adjusting the RF power to change the In content (x value), we prepared InxGa1-xN films with bandgap variations in the range of 2.15–2.63 eV. Upon further investigation, it was found that the grown InxGa1-xN films had hexagonal structure and did not undergo phase separation in the In-rich composition. With the increase of In content from 0.46 to 0.60, the preferred orientation of the InxGa1-xN films changed from (101) to (100) plane, while the surface morphology of the InxGa1-xN films changed from worm-like to spherical grains. Photoluminescence peaks of InxGa1-xN films was composed of intrinsic and defect luminescence. Under irradiation of 450 and 650 nm laser, the responsivity of the InxGa1-xN metal–semiconductor-metal photodetector can reach 5.15 × 10−7 and 3.2 × 10−7 A/W, and the fastest response time can reach 1.28 and 1.32 s, respectively. [ABSTRACT FROM AUTHOR] |
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| ISSN: | 00222461 |
| DOI: | 10.1007/s10853-024-10434-9 |
