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Photoelectric characteristic of single-phase InxGa1-xN films with tunable bandgap through RF magnetron sputtering.

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Title: Photoelectric characteristic of single-phase InxGa1-xN films with tunable bandgap through RF magnetron sputtering.
Authors: Li, Ziyuan1 (AUTHOR), Shen, Longhai1 (AUTHOR) shenlonghai@163.com, Zhou, Ouxiang1 (AUTHOR), Zhu, Xiaotian1 (AUTHOR), Zhang, Yu1 (AUTHOR), Wang, Quhui1 (AUTHOR), Qi, Dongli1 (AUTHOR), Zhang, Xinglai2 (AUTHOR), Han, Mengyao1 (AUTHOR), Xu, Junhao1 (AUTHOR), Chen, Ye1 (AUTHOR), Li, Yuhao1 (AUTHOR)
Source: Journal of Materials Science. Dec2024, Vol. 59 Issue 47, p21828-21845. 18p.
Subjects: Radiofrequency sputtering, Radio frequency, Phase separation, Surface morphology, Photoluminescence, Photoelectricity, Magnetron sputtering
Abstract: InxGa1-xN films with tunable bandgap hold significant potential for photoelectric applications, particularly in wavelength-selective and UV–visible photodetection. Herein, a unique target was designed to prepare bandgap-tunable InxGa1-xN films by RF (radio frequency) magnetron sputtering. By adjusting the RF power to change the In content (x value), we prepared InxGa1-xN films with bandgap variations in the range of 2.15–2.63 eV. Upon further investigation, it was found that the grown InxGa1-xN films had hexagonal structure and did not undergo phase separation in the In-rich composition. With the increase of In content from 0.46 to 0.60, the preferred orientation of the InxGa1-xN films changed from (101) to (100) plane, while the surface morphology of the InxGa1-xN films changed from worm-like to spherical grains. Photoluminescence peaks of InxGa1-xN films was composed of intrinsic and defect luminescence. Under irradiation of 450 and 650 nm laser, the responsivity of the InxGa1-xN metal–semiconductor-metal photodetector can reach 5.15 × 10−7 and 3.2 × 10−7 A/W, and the fastest response time can reach 1.28 and 1.32 s, respectively. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Materials Science is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Photoelectric characteristic of single-phase In<subscript>x</subscript>Ga<subscript>1-x</subscript>N films with tunable bandgap through RF magnetron sputtering.
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  Data: <searchLink fieldCode="AR" term="%22Li%2C+Ziyuan%22">Li, Ziyuan</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Shen%2C+Longhai%22">Shen, Longhai</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> shenlonghai@163.com</i><br /><searchLink fieldCode="AR" term="%22Zhou%2C+Ouxiang%22">Zhou, Ouxiang</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhu%2C+Xiaotian%22">Zhu, Xiaotian</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhang%2C+Yu%22">Zhang, Yu</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Wang%2C+Quhui%22">Wang, Quhui</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Qi%2C+Dongli%22">Qi, Dongli</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhang%2C+Xinglai%22">Zhang, Xinglai</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Han%2C+Mengyao%22">Han, Mengyao</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Xu%2C+Junhao%22">Xu, Junhao</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Chen%2C+Ye%22">Chen, Ye</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Li%2C+Yuhao%22">Li, Yuhao</searchLink><relatesTo>1</relatesTo> (AUTHOR)
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%22">Journal of Materials Science</searchLink>. Dec2024, Vol. 59 Issue 47, p21828-21845. 18p.
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  Data: <searchLink fieldCode="DE" term="%22Radiofrequency+sputtering%22">Radiofrequency sputtering</searchLink><br /><searchLink fieldCode="DE" term="%22Radio+frequency%22">Radio frequency</searchLink><br /><searchLink fieldCode="DE" term="%22Phase+separation%22">Phase separation</searchLink><br /><searchLink fieldCode="DE" term="%22Surface+morphology%22">Surface morphology</searchLink><br /><searchLink fieldCode="DE" term="%22Photoluminescence%22">Photoluminescence</searchLink><br /><searchLink fieldCode="DE" term="%22Photoelectricity%22">Photoelectricity</searchLink><br /><searchLink fieldCode="DE" term="%22Magnetron+sputtering%22">Magnetron sputtering</searchLink>
– Name: Abstract
  Label: Abstract
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  Data: InxGa1-xN films with tunable bandgap hold significant potential for photoelectric applications, particularly in wavelength-selective and UV–visible photodetection. Herein, a unique target was designed to prepare bandgap-tunable InxGa1-xN films by RF (radio frequency) magnetron sputtering. By adjusting the RF power to change the In content (x value), we prepared InxGa1-xN films with bandgap variations in the range of 2.15–2.63 eV. Upon further investigation, it was found that the grown InxGa1-xN films had hexagonal structure and did not undergo phase separation in the In-rich composition. With the increase of In content from 0.46 to 0.60, the preferred orientation of the InxGa1-xN films changed from (101) to (100) plane, while the surface morphology of the InxGa1-xN films changed from worm-like to spherical grains. Photoluminescence peaks of InxGa1-xN films was composed of intrinsic and defect luminescence. Under irradiation of 450 and 650 nm laser, the responsivity of the InxGa1-xN metal–semiconductor-metal photodetector can reach 5.15 × 10−7 and 3.2 × 10−7 A/W, and the fastest response time can reach 1.28 and 1.32 s, respectively. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
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  Data: <i>Copyright of Journal of Materials Science is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1007/s10853-024-10434-9
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      – Code: eng
        Text: English
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        PageCount: 18
        StartPage: 21828
    Subjects:
      – SubjectFull: Radiofrequency sputtering
        Type: general
      – SubjectFull: Radio frequency
        Type: general
      – SubjectFull: Phase separation
        Type: general
      – SubjectFull: Surface morphology
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      – SubjectFull: Photoluminescence
        Type: general
      – SubjectFull: Photoelectricity
        Type: general
      – SubjectFull: Magnetron sputtering
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      – TitleFull: Photoelectric characteristic of single-phase InxGa1-xN films with tunable bandgap through RF magnetron sputtering.
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              Text: Dec2024
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