Bibliographic Details
| Title: |
Physical mechanism of gettering of impurity Ni atom clusters in Si lattice. |
| Alternate Title: |
Фізичний механізм гетерування кластерів домішкових атомів нікелю в ґратці кремнію. |
| Authors: |
Ismaylov, B. K.1 i.bairam@bk.ru, Zikrillayev, N. F.2, Ismailov, K. A.1, Kenzhaev, Z. T.2 |
| Source: |
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2024, Vol. 27 Issue 3, p294-297. 4p. |
| Subjects: |
Atomic clusters, Gettering, Heat radiation & absorption, Crystal lattices, Nickel |
| Abstract: |
This article presents the gettering mechanism and the physical model of impurity Ni atom clusters in the Si crystal lattice. The study finds out that the formed Ni atom clusters lead to gettering various rapidly diffusing impurities, both present in the Si lattice and introduced, as well as oxygen atoms, by stimulating generation of recombination centers of thermal and radiation defects. [ABSTRACT FROM AUTHOR] |
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| Database: |
Engineering Source |
