The photodetector characteristics of the molybdenum oxide-based heterostructure fabricated at varying oxygen and argon gas flow rates via the reactive DC magnetron sputtering.
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| Title: | The photodetector characteristics of the molybdenum oxide-based heterostructure fabricated at varying oxygen and argon gas flow rates via the reactive DC magnetron sputtering. |
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| Authors: | Talebi, S.1 (AUTHOR) samanetalebi71@yahoo.com, Eshghi, H.1 (AUTHOR) |
| Source: | Optical & Quantum Electronics. Jan2025, Vol. 57 Issue 1, p1-14. 14p. |
| Subjects: | DC sputtering, Thin films, Gas flow, Heterojunctions, X-ray diffraction |
| Abstract: | This study investigates the structure and photodetector properties of MoO3-x/p-Si heterojunction grown by reactive DC magnetron sputtering in varying O2/Ar gas flow rates. The X-ray diffraction study revealed the presence of α-MoO3 and sub-oxide phases Mo5O14 with the predominance of α-MoO3 observed in all thin films. It was observed that the prepared samples showed high transmittance values of about 80%. The FESEM images showed that the prepared samples have flake-like structures. An increase in oxygen content resulted in a compact/dense morphology and a noticeable decrease in the size of the grains. The best performance of the photodiodes is achieved by the sample (O2/Ar = 3/12), which has better crystal quality and a low dark saturated current density (0.06 μA/cm2) compared to others. This sample shows the greatest photoresponse ratio (ILight/IDark) of 569 and 812 when exposed to UV and IR light. The MoO3/p-Si heterojunction device demonstrates rapid switching properties, with fast rise and decay times in the 7–32 ms range. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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