Single oscillator modeling of chromium oxide-doped PMMA films and electrical properties of ITO/Cr2O3-doped PMMA/Ag systems for memory technology applications.

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Title: Single oscillator modeling of chromium oxide-doped PMMA films and electrical properties of ITO/Cr2O3-doped PMMA/Ag systems for memory technology applications.
Authors: Nawar, Ahmed M.1,2 (AUTHOR), Mansour, S. F.3 (AUTHOR), Mosaad, S.4 (AUTHOR) sara_mosaad@science.suez.edu.eg, Ibrahim, Ahmed H.4 (AUTHOR)
Source: Journal of Materials Science: Materials in Electronics. Feb2025, Vol. 36 Issue 5, p1-26. 26p.
Subjects: Thin films, Rietveld refinement, Band gaps, Molecular structure, Chromium oxide
Abstract: Herein, chromium oxide (Cr2O3) was fabricated in nanopowder form, and Cr2O3-doped PMMA nanocomposite thin films were fabricated using the spin-coating technique (0.001 to 10 wt%). X-ray diffraction confirmed Cr2O3 powder is nanostructured, crystallizing in the trigonal R-3c space group with lattice parameters a = 4.9541 Å and c = 13.5882 Å, determined via Rietveld refinement. The Cr2O3-doped PMMA nanocomposite thin films exhibit an amorphous structure. The Williamson-Hall plots were utilized to estimate the average crystallite size and lattice strain of the refined XRD patterns and are equal to 14.12 ± 0.03 nm and 3×10-3, respectively. XPS and FESEM investigated the fabricated samples' molecular structure and morphological properties. The estimated energy gap, E g Op of the fabricated Cr2O3-doped PMMA thin films varied from 3.629 ± 0.005 eV to 3.761 ± 0.004 eV with indirect transition and depended on the doping ratio. Cauchy, Sellmeier, and Forouhi-Bloomer mathematical models were used to parameterize the refractive index of the thin films of the Cr2O3-doped PMMA nanocomposite in the non-absorbing region. The intensity of the measured transmission, T%, through the fabricated ITO/Cr2O3-doped PMMA/ITO devices depends on the applied electric field, which is parallel to the direction of incident probe electromagnetic waves (450-1100 nm). The fabricated ITO/Cr2O3-doped PMMA/Ag Schottky devices elucidate (I-V) hysteresis loop at room temperature. The analyzed conduction mechanism in the forward biasing region for all devices showed a large self-electrical switching ratio equal to 108 at 2.1 Volts with a large memory window area. [ABSTRACT FROM AUTHOR]
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Abstract:Herein, chromium oxide (Cr2O3) was fabricated in nanopowder form, and Cr2O3-doped PMMA nanocomposite thin films were fabricated using the spin-coating technique (0.001 to 10 wt%). X-ray diffraction confirmed Cr2O3 powder is nanostructured, crystallizing in the trigonal R-3c space group with lattice parameters a = 4.9541 Å and c = 13.5882 Å, determined via Rietveld refinement. The Cr2O3-doped PMMA nanocomposite thin films exhibit an amorphous structure. The Williamson-Hall plots were utilized to estimate the average crystallite size and lattice strain of the refined XRD patterns and are equal to 14.12 ± 0.03 nm and 3×10-3, respectively. XPS and FESEM investigated the fabricated samples' molecular structure and morphological properties. The estimated energy gap, E g Op of the fabricated Cr2O3-doped PMMA thin films varied from 3.629 ± 0.005 eV to 3.761 ± 0.004 eV with indirect transition and depended on the doping ratio. Cauchy, Sellmeier, and Forouhi-Bloomer mathematical models were used to parameterize the refractive index of the thin films of the Cr2O3-doped PMMA nanocomposite in the non-absorbing region. The intensity of the measured transmission, T%, through the fabricated ITO/Cr2O3-doped PMMA/ITO devices depends on the applied electric field, which is parallel to the direction of incident probe electromagnetic waves (450-1100 nm). The fabricated ITO/Cr2O3-doped PMMA/Ag Schottky devices elucidate (I-V) hysteresis loop at room temperature. The analyzed conduction mechanism in the forward biasing region for all devices showed a large self-electrical switching ratio equal to 108 at 2.1 Volts with a large memory window area. [ABSTRACT FROM AUTHOR]
ISSN:09574522
DOI:10.1007/s10854-025-14354-5