Single oscillator modeling of chromium oxide-doped PMMA films and electrical properties of ITO/Cr2O3-doped PMMA/Ag systems for memory technology applications.
Saved in:
| Title: | Single oscillator modeling of chromium oxide-doped PMMA films and electrical properties of ITO/Cr |
|---|---|
| Authors: | Nawar, Ahmed M.1,2 (AUTHOR), Mansour, S. F.3 (AUTHOR), Mosaad, S.4 (AUTHOR) sara_mosaad@science.suez.edu.eg, Ibrahim, Ahmed H.4 (AUTHOR) |
| Source: | Journal of Materials Science: Materials in Electronics. Feb2025, Vol. 36 Issue 5, p1-26. 26p. |
| Subjects: | Thin films, Rietveld refinement, Band gaps, Molecular structure, Chromium oxide |
| Abstract: | Herein, chromium oxide (Cr2O3) was fabricated in nanopowder form, and Cr2O3-doped PMMA nanocomposite thin films were fabricated using the spin-coating technique (0.001 to 10 wt%). X-ray diffraction confirmed Cr2O3 powder is nanostructured, crystallizing in the trigonal R-3c space group with lattice parameters a = 4.9541 Å and c = 13.5882 Å, determined via Rietveld refinement. The Cr2O3-doped PMMA nanocomposite thin films exhibit an amorphous structure. The Williamson-Hall plots were utilized to estimate the average crystallite size and lattice strain of the refined XRD patterns and are equal to 14.12 ± 0.03 nm and 3×10-3, respectively. XPS and FESEM investigated the fabricated samples' molecular structure and morphological properties. The estimated energy gap, E g Op of the fabricated Cr2O3-doped PMMA thin films varied from 3.629 ± 0.005 eV to 3.761 ± 0.004 eV with indirect transition and depended on the doping ratio. Cauchy, Sellmeier, and Forouhi-Bloomer mathematical models were used to parameterize the refractive index of the thin films of the Cr2O3-doped PMMA nanocomposite in the non-absorbing region. The intensity of the measured transmission, T%, through the fabricated ITO/Cr2O3-doped PMMA/ITO devices depends on the applied electric field, which is parallel to the direction of incident probe electromagnetic waves (450-1100 nm). The fabricated ITO/Cr2O3-doped PMMA/Ag Schottky devices elucidate (I-V) hysteresis loop at room temperature. The analyzed conduction mechanism in the forward biasing region for all devices showed a large self-electrical switching ratio equal to 108 at 2.1 Volts with a large memory window area. [ABSTRACT FROM AUTHOR] |
| Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
|
Full text is not displayed to guests.
Login for full access.
|
|
| FullText | Links: – Type: pdflink Text: Availability: 1 |
|---|---|
| Header | DbId: egs DbLabel: Engineering Source An: 182958516 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
| IllustrationInfo | |
| Items | – Name: Title Label: Title Group: Ti Data: Single oscillator modeling of chromium oxide-doped PMMA films and electrical properties of ITO/Cr<subscript>2</subscript>O<subscript>3</subscript>-doped PMMA/Ag systems for memory technology applications. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Nawar%2C+Ahmed+M%2E%22">Nawar, Ahmed M.</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Mansour%2C+S%2E+F%2E%22">Mansour, S. F.</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Mosaad%2C+S%2E%22">Mosaad, S.</searchLink><relatesTo>4</relatesTo> (AUTHOR)<i> sara_mosaad@science.suez.edu.eg</i><br /><searchLink fieldCode="AR" term="%22Ibrahim%2C+Ahmed+H%2E%22">Ibrahim, Ahmed H.</searchLink><relatesTo>4</relatesTo> (AUTHOR) – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>. Feb2025, Vol. 36 Issue 5, p1-26. 26p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Rietveld+refinement%22">Rietveld refinement</searchLink><br /><searchLink fieldCode="DE" term="%22Band+gaps%22">Band gaps</searchLink><br /><searchLink fieldCode="DE" term="%22Molecular+structure%22">Molecular structure</searchLink><br /><searchLink fieldCode="DE" term="%22Chromium+oxide%22">Chromium oxide</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Herein, chromium oxide (Cr2O3) was fabricated in nanopowder form, and Cr2O3-doped PMMA nanocomposite thin films were fabricated using the spin-coating technique (0.001 to 10 wt%). X-ray diffraction confirmed Cr2O3 powder is nanostructured, crystallizing in the trigonal R-3c space group with lattice parameters a = 4.9541 Å and c = 13.5882 Å, determined via Rietveld refinement. The Cr2O3-doped PMMA nanocomposite thin films exhibit an amorphous structure. The Williamson-Hall plots were utilized to estimate the average crystallite size and lattice strain of the refined XRD patterns and are equal to 14.12 ± 0.03 nm and 3×10-3, respectively. XPS and FESEM investigated the fabricated samples' molecular structure and morphological properties. The estimated energy gap, E g Op of the fabricated Cr2O3-doped PMMA thin films varied from 3.629 ± 0.005 eV to 3.761 ± 0.004 eV with indirect transition and depended on the doping ratio. Cauchy, Sellmeier, and Forouhi-Bloomer mathematical models were used to parameterize the refractive index of the thin films of the Cr2O3-doped PMMA nanocomposite in the non-absorbing region. The intensity of the measured transmission, T%, through the fabricated ITO/Cr2O3-doped PMMA/ITO devices depends on the applied electric field, which is parallel to the direction of incident probe electromagnetic waves (450-1100 nm). The fabricated ITO/Cr2O3-doped PMMA/Ag Schottky devices elucidate (I-V) hysteresis loop at room temperature. The analyzed conduction mechanism in the forward biasing region for all devices showed a large self-electrical switching ratio equal to 108 at 2.1 Volts with a large memory window area. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=182958516 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1007/s10854-025-14354-5 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 26 StartPage: 1 Subjects: – SubjectFull: Thin films Type: general – SubjectFull: Rietveld refinement Type: general – SubjectFull: Band gaps Type: general – SubjectFull: Molecular structure Type: general – SubjectFull: Chromium oxide Type: general Titles: – TitleFull: Single oscillator modeling of chromium oxide-doped PMMA films and electrical properties of ITO/Cr2O3-doped PMMA/Ag systems for memory technology applications. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Nawar, Ahmed M. – PersonEntity: Name: NameFull: Mansour, S. F. – PersonEntity: Name: NameFull: Mosaad, S. – PersonEntity: Name: NameFull: Ibrahim, Ahmed H. IsPartOfRelationships: – BibEntity: Dates: – D: 11 M: 02 Text: Feb2025 Type: published Y: 2025 Identifiers: – Type: issn-print Value: 09574522 Numbering: – Type: volume Value: 36 – Type: issue Value: 5 Titles: – TitleFull: Journal of Materials Science: Materials in Electronics Type: main |
| ResultId | 1 |
