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Demonstration of Integrated Quasi-Vertical DMOS Compatible with the Bipolar-CMOS-DMOS Process Achieving Ultralow R ON,sp.

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Title: Demonstration of Integrated Quasi-Vertical DMOS Compatible with the Bipolar-CMOS-DMOS Process Achieving Ultralow R ON,sp.
Authors: Lin, Feng1,2 (AUTHOR) 230219353@seu.edu.cn, Wu, Tuanzhuang1 (AUTHOR) 230228400@seu.edu.cn, Wang, Weidong1 (AUTHOR) 220226200@seu.edu.cn, Wang, Zhengxuan1 (AUTHOR) 220236426@seu.edu.cn, Zhang, Yi2 (AUTHOR), Li, Sheng1 (AUTHOR) seulisheng@seu.edu.cn, Ye, Ran1 (AUTHOR) 101300309@seu.edu.cn, Zhang, Long1 (AUTHOR) longzhang@seu.edu.cn, Wei, Jiaxing1 (AUTHOR) jiaxingwei@seu.edu.cn, Liu, Siyang1 (AUTHOR), Sun, Weifeng1 (AUTHOR) jiaxingwei@seu.edu.cn
Source: Nanomaterials (2079-4991). Feb2025, Vol. 15 Issue 3, p172. 9p.
Subjects: Electric field effects, Metal oxide semiconductor field-effect transistors, Trenches, Voltage
Abstract: An integrated quasi-vertical double-diffused MOSFET (DMOS) with split-gate trench (SGT) structure (SGT-QVDMOS), whose specific ON-state resistance (RON,sp) breaks the traditional Si limit significantly, is proposed and fabricated. The measured data of the latest manufactured device is presented. By introducing the vertical gate poly, the split grounded source poly, and the asymmetric thick oxide in the gate trench, the traditional lateral drift region is folded in the SGT-QVDMOS. In this way, the device voltage withstanding mode transforms from one dimension to two dimensions, including the horizontal and the vertical directions. Combining the electric field modulation effect and the reduced lateral area, which benefit from the quasi-vertical structure, the forward conducting characteristic of the SGT-QVDMOS is effectively improved. According to the measured results from the SGT-QVDMOS manufactured by the 180 nm Bipolar-CMOS-DMOS (BCD) process, the ultralow ON-state resistance is obtained. The device achieves 1.9 V VTH, 11.07 mΩ∙mm2 RON,sp, and 48.6 V BV, which is 39.0% lower than the traditional Si limit. [ABSTRACT FROM AUTHOR]
Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Label: Title
  Group: Ti
  Data: Demonstration of Integrated Quasi-Vertical DMOS Compatible with the Bipolar-CMOS-DMOS Process Achieving Ultralow R ON,sp.
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  Data: <searchLink fieldCode="AR" term="%22Lin%2C+Feng%22">Lin, Feng</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> 230219353@seu.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Wu%2C+Tuanzhuang%22">Wu, Tuanzhuang</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> 230228400@seu.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Wang%2C+Weidong%22">Wang, Weidong</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> 220226200@seu.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Wang%2C+Zhengxuan%22">Wang, Zhengxuan</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> 220236426@seu.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Zhang%2C+Yi%22">Zhang, Yi</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Li%2C+Sheng%22">Li, Sheng</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> seulisheng@seu.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Ye%2C+Ran%22">Ye, Ran</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> 101300309@seu.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Zhang%2C+Long%22">Zhang, Long</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> longzhang@seu.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Wei%2C+Jiaxing%22">Wei, Jiaxing</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> jiaxingwei@seu.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Liu%2C+Siyang%22">Liu, Siyang</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Sun%2C+Weifeng%22">Sun, Weifeng</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> jiaxingwei@seu.edu.cn</i>
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  Data: <searchLink fieldCode="JN" term="%22Nanomaterials+%282079-4991%29%22">Nanomaterials (2079-4991)</searchLink>. Feb2025, Vol. 15 Issue 3, p172. 9p.
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  Data: <searchLink fieldCode="DE" term="%22Electric+field+effects%22">Electric field effects</searchLink><br /><searchLink fieldCode="DE" term="%22Metal+oxide+semiconductor+field-effect+transistors%22">Metal oxide semiconductor field-effect transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Trenches%22">Trenches</searchLink><br /><searchLink fieldCode="DE" term="%22Voltage%22">Voltage</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: An integrated quasi-vertical double-diffused MOSFET (DMOS) with split-gate trench (SGT) structure (SGT-QVDMOS), whose specific ON-state resistance (RON,sp) breaks the traditional Si limit significantly, is proposed and fabricated. The measured data of the latest manufactured device is presented. By introducing the vertical gate poly, the split grounded source poly, and the asymmetric thick oxide in the gate trench, the traditional lateral drift region is folded in the SGT-QVDMOS. In this way, the device voltage withstanding mode transforms from one dimension to two dimensions, including the horizontal and the vertical directions. Combining the electric field modulation effect and the reduced lateral area, which benefit from the quasi-vertical structure, the forward conducting characteristic of the SGT-QVDMOS is effectively improved. According to the measured results from the SGT-QVDMOS manufactured by the 180 nm Bipolar-CMOS-DMOS (BCD) process, the ultralow ON-state resistance is obtained. The device achieves 1.9 V VTH, 11.07 mΩ∙mm2 RON,sp, and 48.6 V BV, which is 39.0% lower than the traditional Si limit. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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      – Type: doi
        Value: 10.3390/nano15030172
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 9
        StartPage: 172
    Subjects:
      – SubjectFull: Electric field effects
        Type: general
      – SubjectFull: Metal oxide semiconductor field-effect transistors
        Type: general
      – SubjectFull: Trenches
        Type: general
      – SubjectFull: Voltage
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    Titles:
      – TitleFull: Demonstration of Integrated Quasi-Vertical DMOS Compatible with the Bipolar-CMOS-DMOS Process Achieving Ultralow R ON,sp.
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            NameFull: Lin, Feng
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              M: 02
              Text: Feb2025
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