Laser ablation and stealth dicing of full-thickness silicon wafer.
Saved in:
| Title: | Laser ablation and stealth dicing of full-thickness silicon wafer. |
|---|---|
| Authors: | Son, Yeongil1 (AUTHOR), Shin, Joonghan1,2,3 (AUTHOR) jhshin@kongju.ac.kr |
| Source: | International Journal of Advanced Manufacturing Technology. Mar2025, Vol. 137 Issue 3, p1599-1614. 16p. |
| Subjects: | Laser ablation, Wafer level packaging, Silicon wafers, Surface defects, Laser pulses |
| Abstract: | Wafer-level packaging is attracting increasing attention from semiconductor manufacturers. Dicing systems that cut thick wafers, such as full-thickness or bonded wafers, into individual chips are becoming ever more important. Laser dicing is associated with greater precision and fewer defects than other cutting methods. This study explores the laser ablation and stealth dicing of thick wafers using a 1064-nm nanosecond (ns) pulsed laser. To identify the proper conditions for each process, various process parameters such as pulse repetition rate and pulse width, average power, and scan speed were tested, and the processing characteristics and cutting mechanisms were analyzed. During laser ablation, surface defects such as spatter and grooves were reduced under the 1000 kHz and 10 ns pulse condition; single scribing passes with an average power of 70 W fully cut the specimens. Stealth dicing under the 66 kHz and 350 ns pulse condition was not associated with surface defects such as spatter or chipping. Uniform micro-cracked layers formed inside wafers, in turn inducing splitting at a very low average power (1 W). However, when stealth dicing proceeded under the 1000 kHz and 10 ns pulse condition, material was removed via melt ejection at the top of specimens; the cut surfaces were then similar to those afforded by laser ablation. [ABSTRACT FROM AUTHOR] |
| Copyright of International Journal of Advanced Manufacturing Technology is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
|
Full text is not displayed to guests.
Login for full access.
|
|
| Abstract: | Wafer-level packaging is attracting increasing attention from semiconductor manufacturers. Dicing systems that cut thick wafers, such as full-thickness or bonded wafers, into individual chips are becoming ever more important. Laser dicing is associated with greater precision and fewer defects than other cutting methods. This study explores the laser ablation and stealth dicing of thick wafers using a 1064-nm nanosecond (ns) pulsed laser. To identify the proper conditions for each process, various process parameters such as pulse repetition rate and pulse width, average power, and scan speed were tested, and the processing characteristics and cutting mechanisms were analyzed. During laser ablation, surface defects such as spatter and grooves were reduced under the 1000 kHz and 10 ns pulse condition; single scribing passes with an average power of 70 W fully cut the specimens. Stealth dicing under the 66 kHz and 350 ns pulse condition was not associated with surface defects such as spatter or chipping. Uniform micro-cracked layers formed inside wafers, in turn inducing splitting at a very low average power (1 W). However, when stealth dicing proceeded under the 1000 kHz and 10 ns pulse condition, material was removed via melt ejection at the top of specimens; the cut surfaces were then similar to those afforded by laser ablation. [ABSTRACT FROM AUTHOR] |
|---|---|
| ISSN: | 02683768 |
| DOI: | 10.1007/s00170-025-15275-7 |
