Bibliographic Details
| Title: |
Calculation of radiation hardness of chromium-compensated gallium arsenade sensors irradiated with 1–20 MeV beta particles. |
| Authors: |
Tyazhev, A. V.1 (AUTHOR) antontyazhev@mail.ru, Vinnik, A. E.1 (AUTHOR) evg2v@mail.ru, Zarubin, A. N.1 (AUTHOR) zarubin_an@mail.ru, Chsherbakov, I. D.1 (AUTHOR) ivan_sherbakov94@mail.ru, Skakunov, M. S.1 (AUTHOR) skakunovms@mail.ru, Tolbanov, O. P.1 (AUTHOR), Shaimerdenova, L. K.1 (AUTHOR) leila-leika@mail.ru, Shemeryankina, A. V.1 (AUTHOR) shemer@bk.ru, Kosmachev, P. V.1 (AUTHOR) kosmachev@mail.tsu.ru, Panin, S. V.2 (AUTHOR) svp@ispms.ru |
| Source: |
Russian Physics Journal. Nov2024, Vol. 67 Issue 11, p2144-2151. 8p. |
| Subjects: |
Charge carrier lifetime, Beta rays, Charge carriers, Gallium arsenide, Gallium |
| Abstract: |
The paper presents the calculation results of the charge carrier lifetime and charge collection efficiency of sensors based on chromium-compensated gallium arsenide irradiated with beta particles at the energy of 1 to 20 MeV. It is found that the charge collection efficiency decreases down to 1% of the initial value after the sensor irradiation up to doses of about 1 MGy. The thickness reduction to 100–150 μm improves the sensor radiation resistance up to 2 MGy. It is shown that calculation results are in agreement with the experimental data. [ABSTRACT FROM AUTHOR] |
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| Database: |
Engineering Source |
