Enhanced microstructure and electrical performance of a cost-effective Ni/Cu/n-GaN Schottky diode with a V2O5 interlayer for optoelectronic applications.
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| Title: | Enhanced microstructure and electrical performance of a cost-effective Ni/Cu/n-GaN Schottky diode with a V |
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| Authors: | Aswini, Karri1 (AUTHOR), Munirathnam, K.1 (AUTHOR) mail2rathnam@gmail.com, Manjunath, V.2 (AUTHOR) drvmanju18@gmail.com, Reddy, N. Nanda Kumar3 (AUTHOR), Alhammadi, Salh4 (AUTHOR), Kumar, Koppala Siva5 (AUTHOR), Golkonda, Srinivas Reddy6 (AUTHOR), Minnam Reddy, Vasudeva Reddy4,7 (AUTHOR) drmvasudr9@gmail.com, Kim, Woo Kyoung4 (AUTHOR) wkim@ynu.ac.kr, Ranjith, R.1 (AUTHOR), Amina, Musarat8 (AUTHOR) mamina@ksu.edu.sa, Dastagiri, S.9 (AUTHOR) |
| Source: | Journal of Materials Science: Materials in Electronics. Mar2025, Vol. 36 Issue 7, p1-20. 20p. |
| Abstract: | This study investigates the fabrication and comparative analysis of Ni/Cu/V2O5/n-GaN heterojunctions (HJs) and Ni/Cu/n-GaN Schottky diodes (SDs), where the V2O5 insulating layer was deposited using spin-coating method, and Ni/Cu contacts were formed via DC/RF magnetron sputtering. The focus is on the effect of a high-quality and cost-effective V2O5 insulating layer positioned between the metal and semiconductor interface. XRD and EDX analyses revealed that the V2O5 interlayer and metal contacts are well oriented and of high quality. AFM demonstrated that the metal contacts were uniform and free of cracks. XPS analysis demonstrated the presence of all elements within the HJ, with distinct peaks observed at different etching times, indicating appropriate peak values. The electrical studies encompass current–voltage (I–V) and capacitance–voltage (C–V) properties, which were systematically studied for both HJs and SDs. Statistical analysis revealed the average barrier heights (Φb) and ideality factors (n) of 0.80 eV and 1.25 for the SDs, whereas for the HJs, they averaged 1.12 eV and 1.55. Using Cheung’s plots, the Φb, n, and series resistance (RS) were estimated for both SDs and HJs, with results showing good agreement across I–V, Norde’s plots, and surface potential plots. The findings indicate that the NSS of HJs is inferior to that of SDs, likely due to the introduction of the high-quality V2O5 interlayer, which reduces the interface state density. Additionally, the dominant conduction mechanism was identified as PFE is observed in the lower bias region, while SE dominates in the higher bias region, for both SDs and HJs. The photodetection parameters of the fabricated HJ and SD photodetector diodes were tested in dark and 365 nm UV light. The PDs showed good rectification under UV light, with the MOS-HJ PD having a better saturation current than the MS-SD PD. It has been observed that the cost-effective V2O5 interlayer serves as a high-quality insulating material, making it suitable for the fabrication of GaN-based MIS junctions and PD devices. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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| Abstract: | This study investigates the fabrication and comparative analysis of Ni/Cu/V2O5/n-GaN heterojunctions (HJs) and Ni/Cu/n-GaN Schottky diodes (SDs), where the V2O5 insulating layer was deposited using spin-coating method, and Ni/Cu contacts were formed via DC/RF magnetron sputtering. The focus is on the effect of a high-quality and cost-effective V2O5 insulating layer positioned between the metal and semiconductor interface. XRD and EDX analyses revealed that the V2O5 interlayer and metal contacts are well oriented and of high quality. AFM demonstrated that the metal contacts were uniform and free of cracks. XPS analysis demonstrated the presence of all elements within the HJ, with distinct peaks observed at different etching times, indicating appropriate peak values. The electrical studies encompass current–voltage (I–V) and capacitance–voltage (C–V) properties, which were systematically studied for both HJs and SDs. Statistical analysis revealed the average barrier heights (Φb) and ideality factors (n) of 0.80 eV and 1.25 for the SDs, whereas for the HJs, they averaged 1.12 eV and 1.55. Using Cheung’s plots, the Φb, n, and series resistance (RS) were estimated for both SDs and HJs, with results showing good agreement across I–V, Norde’s plots, and surface potential plots. The findings indicate that the NSS of HJs is inferior to that of SDs, likely due to the introduction of the high-quality V2O5 interlayer, which reduces the interface state density. Additionally, the dominant conduction mechanism was identified as PFE is observed in the lower bias region, while SE dominates in the higher bias region, for both SDs and HJs. The photodetection parameters of the fabricated HJ and SD photodetector diodes were tested in dark and 365 nm UV light. The PDs showed good rectification under UV light, with the MOS-HJ PD having a better saturation current than the MS-SD PD. It has been observed that the cost-effective V2O5 interlayer serves as a high-quality insulating material, making it suitable for the fabrication of GaN-based MIS junctions and PD devices. [ABSTRACT FROM AUTHOR] |
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| ISSN: | 09574522 |
| DOI: | 10.1007/s10854-025-14466-y |
