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Ultrafast saturable to reverse saturable absorption transition in CoTCPP SURMOF nanofilms and its application to all-optical logic and encryption.

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Title: Ultrafast saturable to reverse saturable absorption transition in CoTCPP SURMOF nanofilms and its application to all-optical logic and encryption.
Authors: Saifi, Anam1 (AUTHOR), Roy, Sukhdev1 (AUTHOR) sukhdevroy@dei.ac.in
Source: Journal of Nonlinear Optical Physics & Materials. Dec2025, Vol. 34 Issue 8, p1-21. 21p.
Subjects: Information technology security, NAND gates, Nanofilms, Laser pulses, Mathematical logic, Logic circuits, Data transmission systems
Abstract: A detailed theoretical analysis of ultrafast intensity-dependent Saturable Absorption (SA) to Reverse Saturable Absorption (RSA) transition in CoTCPP SURMOF nanofilms has been presented with femtosecond (fs) laser pulses at 400 nm. The effect of input pulse intensity, sample thickness, concentration, and 3 rd and 5 th order nonlinear absorption (NLA) coefficients on transmittance has been studied in detail and optimized for high contrast and low-power operation. The maximum modulation achieved for RSA is 55% at 62 GW/cm2. The results have been used to design all-optical fs-NOT, AND, OR, XOR and the universal NOR and NAND logic gates with 400 nm thick CoTCPP SURMOF nanofilms. The modulation achieved for all-optical universal NAND logic gate is 45% at I o = 5 5 GW/cm2. All-optical encryption and decryption for information security has been demonstrated based on all-optical XOR logic gates which offers high bit rate of 9 Tbits/s at I o = 5 5 GW/cm2 for secure data transmission without any optoelectronic conversion delays. An all-optical passive diode has also been theoretically designed with 17 dB nonreciprocity. Ultrafast operation at relatively low input intensities opens up interesting prospects for the applicability of CoTCPP SURMOF nanofilms for ultrafast all-optical computing and information processing. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
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Abstract:A detailed theoretical analysis of ultrafast intensity-dependent Saturable Absorption (SA) to Reverse Saturable Absorption (RSA) transition in CoTCPP SURMOF nanofilms has been presented with femtosecond (fs) laser pulses at 400 nm. The effect of input pulse intensity, sample thickness, concentration, and 3 rd and 5 th order nonlinear absorption (NLA) coefficients on transmittance has been studied in detail and optimized for high contrast and low-power operation. The maximum modulation achieved for RSA is 55% at 62 GW/cm2. The results have been used to design all-optical fs-NOT, AND, OR, XOR and the universal NOR and NAND logic gates with 400 nm thick CoTCPP SURMOF nanofilms. The modulation achieved for all-optical universal NAND logic gate is 45% at I o = 5 5 GW/cm2. All-optical encryption and decryption for information security has been demonstrated based on all-optical XOR logic gates which offers high bit rate of 9 Tbits/s at I o = 5 5 GW/cm2 for secure data transmission without any optoelectronic conversion delays. An all-optical passive diode has also been theoretically designed with 17 dB nonreciprocity. Ultrafast operation at relatively low input intensities opens up interesting prospects for the applicability of CoTCPP SURMOF nanofilms for ultrafast all-optical computing and information processing. [ABSTRACT FROM AUTHOR]
ISSN:02188635
DOI:10.1142/S0218863524500292