Modeling the impact of short-channel effects on double-gate MgZnO/ZnO HEMTs: a numerical approach.
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| Title: | Modeling the impact of short-channel effects on double-gate MgZnO/ZnO HEMTs: a numerical approach. |
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| Authors: | Vinothkumar, K.1 (AUTHOR) vinothdgl91@psnacet.edu.in, Rahuman, A. Kaleel1 (AUTHOR) kaleel23@gmail.com |
| Source: | Optical & Quantum Electronics. Mar2025, Vol. 57 Issue 3, p1-21. 21p. |
| Subjects: | Electric currents, Separation of variables, Shortwave radio, Surface potential, Electric fields |
| Abstract: | The MgZnO/ZnO High Electron Mobility Transistor technology plays a vital role in radio frequency and high switching power applications. In this work, an analytical model for Double-Gate(DG) MgZnO/ZnO HEMTs is proposed to enhance carrier transport efficiency while significantly mitigating short-channel effects. The proposed DG-MgZnO/ZnO HEMT model estimates critical parameters, such as surface potential, drain-current (I d) , electric field (E f ), and threshold voltage (V th ) for both bind and segregated gate bias voltage conditions using the variable separation method. The lateral electric field and channel potential for the front and rear gate heterointerfaces are derived using simplified analytical equations, with the results verified through simulations using the Sentaurus TCAD device simulator. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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| Abstract: | The MgZnO/ZnO High Electron Mobility Transistor technology plays a vital role in radio frequency and high switching power applications. In this work, an analytical model for Double-Gate(DG) MgZnO/ZnO HEMTs is proposed to enhance carrier transport efficiency while significantly mitigating short-channel effects. The proposed DG-MgZnO/ZnO HEMT model estimates critical parameters, such as surface potential, drain-current (I d) , electric field (E f ), and threshold voltage (V th ) for both bind and segregated gate bias voltage conditions using the variable separation method. The lateral electric field and channel potential for the front and rear gate heterointerfaces are derived using simplified analytical equations, with the results verified through simulations using the Sentaurus TCAD device simulator. [ABSTRACT FROM AUTHOR] |
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| ISSN: | 03068919 |
| DOI: | 10.1007/s11082-025-08104-4 |
