Design and Characterization of a 3.5 GHz CMOS Power Amplifier for Low-Band 5G Applications.
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| Title: | Design and Characterization of a 3.5 GHz CMOS Power Amplifier for Low-Band 5G Applications. |
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| Authors: | Hasan, Ahmad Fariz1,2 (AUTHOR) farizhasan@unimap.edu.my, Zainol Murad, Sohiful Anuar1,2 (AUTHOR) sohiful@unimap.edu.my, Abu Bakar, Faizah1,2 (AUTHOR) faizahbakar@unimap.edu.my, Sapawi, Rohana3 (AUTHOR) srohana@unimas.edu.my |
| Source: | IETE Journal of Research. Mar2025, Vol. 71 Issue 3, p1009-1015. 7p. |
| Subjects: | CMOS amplifiers, Complementary metal oxide semiconductors, Radio frequency, 5G networks, Transistors |
| Abstract: | A 3.5 GHz CMOS power amplifier (PA) designed for 5G applications is presented in this study, utilizing the 0.18 µm RF CMOS process technology. The circuit architecture comprises two stages: the first stage employs a cascode topology with a negative voltage applied to the transistor body technique to achieve sufficient gain and minimize current, thereby reducing power consumption. In the second stage, to ensure high efficiency, a class-E amplifier is being used. Measurement results indicate a power gain (S21) of 17.2 dB, a power-added efficiency (PAE) of 45.6% and a saturated power (Psat) of 8.5 dBm, obtained at 3.5 GHz. These findings validate the suitability of the proposed design at low-band frequency for 5G applications. The chip area for the proposed design is 2.45 mm². The discrepancy between simulation and measurement is due to the parasitic in the layout design. [ABSTRACT FROM AUTHOR] |
| Copyright of IETE Journal of Research is the property of Taylor & Francis Ltd and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
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| Header | DbId: egs DbLabel: Engineering Source An: 184339649 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Design and Characterization of a 3.5 GHz CMOS Power Amplifier for Low-Band 5G Applications. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Hasan%2C+Ahmad+Fariz%22">Hasan, Ahmad Fariz</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> farizhasan@unimap.edu.my</i><br /><searchLink fieldCode="AR" term="%22Zainol+Murad%2C+Sohiful+Anuar%22">Zainol Murad, Sohiful Anuar</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> sohiful@unimap.edu.my</i><br /><searchLink fieldCode="AR" term="%22Abu+Bakar%2C+Faizah%22">Abu Bakar, Faizah</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> faizahbakar@unimap.edu.my</i><br /><searchLink fieldCode="AR" term="%22Sapawi%2C+Rohana%22">Sapawi, Rohana</searchLink><relatesTo>3</relatesTo> (AUTHOR)<i> srohana@unimas.edu.my</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22IETE+Journal+of+Research%22">IETE Journal of Research</searchLink>. Mar2025, Vol. 71 Issue 3, p1009-1015. 7p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22CMOS+amplifiers%22">CMOS amplifiers</searchLink><br /><searchLink fieldCode="DE" term="%22Complementary+metal+oxide+semiconductors%22">Complementary metal oxide semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Radio+frequency%22">Radio frequency</searchLink><br /><searchLink fieldCode="DE" term="%225G+networks%22">5G networks</searchLink><br /><searchLink fieldCode="DE" term="%22Transistors%22">Transistors</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: A 3.5 GHz CMOS power amplifier (PA) designed for 5G applications is presented in this study, utilizing the 0.18 µm RF CMOS process technology. The circuit architecture comprises two stages: the first stage employs a cascode topology with a negative voltage applied to the transistor body technique to achieve sufficient gain and minimize current, thereby reducing power consumption. In the second stage, to ensure high efficiency, a class-E amplifier is being used. Measurement results indicate a power gain (S21) of 17.2 dB, a power-added efficiency (PAE) of 45.6% and a saturated power (Psat) of 8.5 dBm, obtained at 3.5 GHz. These findings validate the suitability of the proposed design at low-band frequency for 5G applications. The chip area for the proposed design is 2.45 mm². The discrepancy between simulation and measurement is due to the parasitic in the layout design. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of IETE Journal of Research is the property of Taylor & Francis Ltd and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1080/03772063.2024.2439033 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 7 StartPage: 1009 Subjects: – SubjectFull: CMOS amplifiers Type: general – SubjectFull: Complementary metal oxide semiconductors Type: general – SubjectFull: Radio frequency Type: general – SubjectFull: 5G networks Type: general – SubjectFull: Transistors Type: general Titles: – TitleFull: Design and Characterization of a 3.5 GHz CMOS Power Amplifier for Low-Band 5G Applications. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Hasan, Ahmad Fariz – PersonEntity: Name: NameFull: Zainol Murad, Sohiful Anuar – PersonEntity: Name: NameFull: Abu Bakar, Faizah – PersonEntity: Name: NameFull: Sapawi, Rohana IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 03 Text: Mar2025 Type: published Y: 2025 Identifiers: – Type: issn-print Value: 03772063 Numbering: – Type: volume Value: 71 – Type: issue Value: 3 Titles: – TitleFull: IETE Journal of Research Type: main |
| ResultId | 1 |
