Features of Physical Differentiation with Respect to Light Absorbance in Junction Photovoltage Spectra.

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Bibliographic Details
Title:	Features of Physical Differentiation with Respect to Light Absorbance in Junction Photovoltage Spectra.
Authors:	Berezhinskiı, L. I.¹, Venger, E. F.¹, Matyash, I. E.¹, Sachenko, A. V.¹, Serdega, B. K.¹ serdega@isp.kiev.ua
Source:	Semiconductors. Oct2005, Vol. 39 Issue 10, p1122-1127. 6p. 5 Diagrams, 1 Chart.
Subjects:	Absorbance scale (Spectroscopy), Absorption spectra, Spectrophotometry, Spectrum analysis, Dichroism, Optical polarization, Silicon, Nonmetals, Electric conductivity, Semiconductors
Abstract:	Junction-photovoltage pleochroism is studied in crystalline silicon under the conditions of a conductivity anisotropy induced by a uniaxial compressive strain. Polarization modulation of light has been used: the samples are excited by linearly polarized light, with the polarizations periodically alternating with respect to the optical axis. The spectral characteristics obtained in such a way represent the polarization difference of the photovoltages, which depends on the light absorbance. A heavy dependence of the spectrum shape on the type of p–n junctions, which differ in relation to base parameters and emitter technologies, is detected. An analysis of the spectra shows that the condition of physical differentiation with respect to absorbance is satisfied only in p–n junctions with a negligible space-charge thickness. © 2005 Pleiades Publishing, Inc. [ABSTRACT FROM AUTHOR]
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Database:	Engineering Source

Description
Abstract:	Junction-photovoltage pleochroism is studied in crystalline silicon under the conditions of a conductivity anisotropy induced by a uniaxial compressive strain. Polarization modulation of light has been used: the samples are excited by linearly polarized light, with the polarizations periodically alternating with respect to the optical axis. The spectral characteristics obtained in such a way represent the polarization difference of the photovoltages, which depends on the light absorbance. A heavy dependence of the spectrum shape on the type of p–n junctions, which differ in relation to base parameters and emitter technologies, is detected. An analysis of the spectra shows that the condition of physical differentiation with respect to absorbance is satisfied only in p–n junctions with a negligible space-charge thickness. © 2005 Pleiades Publishing, Inc. [ABSTRACT FROM AUTHOR]
ISSN:	10637826
DOI:	10.1134/1.2085257