Bibliographic Details
| Title: |
Transient Pulsed Analysis on GaN HEMTs at Cryogenic Temperatures. |
| Authors: |
Ching-Hui Lin1, Wen-Kai Wang1, Po-Chen Lin1, Cheng-Kuo Lin1, Yu-Jung Chang1, Yi-Jen Chan1 yjchan@ee.ncu.edu.tw |
| Source: |
IEEE Electron Device Letters. Oct2005, Vol. 26 Issue 10, p710-712. 3p. 3 Graphs. |
| Subjects: |
Modulation-doped field-effect transistors, Field-effect transistors, Electronic pulse techniques, Materials at low temperatures, Cryoelectronics, Low temperature engineering, Transistors |
| Abstract: |
A pulsed measurement of AlGaN/GaN high electron mobility transistors (HEMTs) current-voltage (I–V) output characteristics from 100 to 300 K temperatures has been systematically investigated, and a significant kink is clearly observed, which is more severe at cryogenic temperatures. By comparing the pulsed and dc I–V curves, the kink effect is more significant in the pulsed mode evaluation, which indicates a time constant related mechanism involved in the carrier transport. Moreover, a weak impact ionization by monitoring the gate current in the on-state of device has also been observed, and it is more significant at cryogenic temperatures. [ABSTRACT FROM AUTHOR] |
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| Database: |
Engineering Source |
