APA (7th ed.) Citation

Lin, C., Wang, W., Lin, P., Lin, C., Chang, Y., & Chan, Y. (2005). Transient Pulsed Analysis on GaN HEMTs at Cryogenic Temperatures. IEEE Electron Device Letters, 26(10), 710. https://doi.org/10.1109/LED.2005.856709

Chicago Style (17th ed.) Citation

Lin, Ching-Hui, Wen-Kai Wang, Po-Chen Lin, Cheng-Kuo Lin, Yu-Jung Chang, and Yi-Jen Chan. "Transient Pulsed Analysis on GaN HEMTs at Cryogenic Temperatures." IEEE Electron Device Letters 26, no. 10 (2005): 710. https://doi.org/10.1109/LED.2005.856709.

MLA (9th ed.) Citation

Lin, Ching-Hui, et al. "Transient Pulsed Analysis on GaN HEMTs at Cryogenic Temperatures." IEEE Electron Device Letters, vol. 26, no. 10, 2005, p. 710, https://doi.org/10.1109/LED.2005.856709.