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Transient Pulsed Analysis on GaN HEMTs at Cryogenic Temperatures.

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Title: Transient Pulsed Analysis on GaN HEMTs at Cryogenic Temperatures.
Authors: Ching-Hui Lin1, Wen-Kai Wang1, Po-Chen Lin1, Cheng-Kuo Lin1, Yu-Jung Chang1, Yi-Jen Chan1 yjchan@ee.ncu.edu.tw
Source: IEEE Electron Device Letters. Oct2005, Vol. 26 Issue 10, p710-712. 3p. 3 Graphs.
Subjects: Modulation-doped field-effect transistors, Field-effect transistors, Electronic pulse techniques, Materials at low temperatures, Cryoelectronics, Low temperature engineering, Transistors
Abstract: A pulsed measurement of AlGaN/GaN high electron mobility transistors (HEMTs) current-voltage (I–V) output characteristics from 100 to 300 K temperatures has been systematically investigated, and a significant kink is clearly observed, which is more severe at cryogenic temperatures. By comparing the pulsed and dc I–V curves, the kink effect is more significant in the pulsed mode evaluation, which indicates a time constant related mechanism involved in the carrier transport. Moreover, a weak impact ionization by monitoring the gate current in the on-state of device has also been observed, and it is more significant at cryogenic temperatures. [ABSTRACT FROM AUTHOR]
Copyright of IEEE Electron Device Letters is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Transient Pulsed Analysis on GaN HEMTs at Cryogenic Temperatures.
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  Data: <searchLink fieldCode="AR" term="%22Ching-Hui+Lin%22">Ching-Hui Lin</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Wen-Kai+Wang%22">Wen-Kai Wang</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Po-Chen+Lin%22">Po-Chen Lin</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Cheng-Kuo+Lin%22">Cheng-Kuo Lin</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Yu-Jung+Chang%22">Yu-Jung Chang</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Yi-Jen+Chan%22">Yi-Jen Chan</searchLink><relatesTo>1</relatesTo><i> yjchan@ee.ncu.edu.tw</i>
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  Data: <searchLink fieldCode="JN" term="%22IEEE+Electron+Device+Letters%22">IEEE Electron Device Letters</searchLink>. Oct2005, Vol. 26 Issue 10, p710-712. 3p. 3 Graphs.
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  Data: <searchLink fieldCode="DE" term="%22Modulation-doped+field-effect+transistors%22">Modulation-doped field-effect transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Field-effect+transistors%22">Field-effect transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Electronic+pulse+techniques%22">Electronic pulse techniques</searchLink><br /><searchLink fieldCode="DE" term="%22Materials+at+low+temperatures%22">Materials at low temperatures</searchLink><br /><searchLink fieldCode="DE" term="%22Cryoelectronics%22">Cryoelectronics</searchLink><br /><searchLink fieldCode="DE" term="%22Low+temperature+engineering%22">Low temperature engineering</searchLink><br /><searchLink fieldCode="DE" term="%22Transistors%22">Transistors</searchLink>
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  Data: A pulsed measurement of AlGaN/GaN high electron mobility transistors (HEMTs) current-voltage (I–V) output characteristics from 100 to 300 K temperatures has been systematically investigated, and a significant kink is clearly observed, which is more severe at cryogenic temperatures. By comparing the pulsed and dc I–V curves, the kink effect is more significant in the pulsed mode evaluation, which indicates a time constant related mechanism involved in the carrier transport. Moreover, a weak impact ionization by monitoring the gate current in the on-state of device has also been observed, and it is more significant at cryogenic temperatures. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
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  Data: <i>Copyright of IEEE Electron Device Letters is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1109/LED.2005.856709
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      – Code: eng
        Text: English
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        PageCount: 3
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      – SubjectFull: Modulation-doped field-effect transistors
        Type: general
      – SubjectFull: Field-effect transistors
        Type: general
      – SubjectFull: Electronic pulse techniques
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      – SubjectFull: Materials at low temperatures
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      – SubjectFull: Transistors
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      – TitleFull: Transient Pulsed Analysis on GaN HEMTs at Cryogenic Temperatures.
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              Text: Oct2005
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