High Capacitance Density and Thermal Stability in Strontium.
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| Title: | High Capacitance Density and Thermal Stability in Strontium. |
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| Authors: | Feng, Yilong1 (AUTHOR), Lu, Zhenya1 (AUTHOR) zhylu@scut.edu.cn, Lv, Ming1 (AUTHOR) immlv@scut.edu.cn |
| Source: | Materials (1996-1944). Apr2025, Vol. 18 Issue 8, p1687. 12p. |
| Subjects: | Radiofrequency sputtering, Magnetron sputtering, Thin films, Substrates (Materials science), Dielectric properties |
| Abstract: | Magnetron sputtering allows for the accurate estimation of film thickness. Strontium titanate (STO) thin films were deposited on Nb-doped STO substrates using radiofrequency magnetron sputtering technology. The microstructures and dielectric properties of STO thin films were investigated. X-ray diffraction (XRD) analysis indicates that uniform polycrystalline STO films were obtained after thermal annealing at 650 °C. The films exhibit a significant correlation between thickness, annealing temperature, and breakdown field strength. The optimal film with a thickness of 1150 nm achieves a capacitance density of 1688 pF/mm2 and a breakdown field strength of 270 kV/mm. Additionally, STO films annealed at 650 °C maintained their capacitance value within ±15% across a temperature range of −55 °C to 125 °C. These results highlight the potential of STO thin films for high-performance capacitor applications. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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| Abstract: | Magnetron sputtering allows for the accurate estimation of film thickness. Strontium titanate (STO) thin films were deposited on Nb-doped STO substrates using radiofrequency magnetron sputtering technology. The microstructures and dielectric properties of STO thin films were investigated. X-ray diffraction (XRD) analysis indicates that uniform polycrystalline STO films were obtained after thermal annealing at 650 °C. The films exhibit a significant correlation between thickness, annealing temperature, and breakdown field strength. The optimal film with a thickness of 1150 nm achieves a capacitance density of 1688 pF/mm2 and a breakdown field strength of 270 kV/mm. Additionally, STO films annealed at 650 °C maintained their capacitance value within ±15% across a temperature range of −55 °C to 125 °C. These results highlight the potential of STO thin films for high-performance capacitor applications. [ABSTRACT FROM AUTHOR] |
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| ISSN: | 19961944 |
| DOI: | 10.3390/ma18081687 |
