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High Capacitance Density and Thermal Stability in Strontium.

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Title: High Capacitance Density and Thermal Stability in Strontium.
Authors: Feng, Yilong1 (AUTHOR), Lu, Zhenya1 (AUTHOR) zhylu@scut.edu.cn, Lv, Ming1 (AUTHOR) immlv@scut.edu.cn
Source: Materials (1996-1944). Apr2025, Vol. 18 Issue 8, p1687. 12p.
Subjects: Radiofrequency sputtering, Magnetron sputtering, Thin films, Substrates (Materials science), Dielectric properties
Abstract: Magnetron sputtering allows for the accurate estimation of film thickness. Strontium titanate (STO) thin films were deposited on Nb-doped STO substrates using radiofrequency magnetron sputtering technology. The microstructures and dielectric properties of STO thin films were investigated. X-ray diffraction (XRD) analysis indicates that uniform polycrystalline STO films were obtained after thermal annealing at 650 °C. The films exhibit a significant correlation between thickness, annealing temperature, and breakdown field strength. The optimal film with a thickness of 1150 nm achieves a capacitance density of 1688 pF/mm2 and a breakdown field strength of 270 kV/mm. Additionally, STO films annealed at 650 °C maintained their capacitance value within ±15% across a temperature range of −55 °C to 125 °C. These results highlight the potential of STO thin films for high-performance capacitor applications. [ABSTRACT FROM AUTHOR]
Copyright of Materials (1996-1944) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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DbLabel: Engineering Source
An: 184752605
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PubType: Academic Journal
PubTypeId: academicJournal
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  Data: High Capacitance Density and Thermal Stability in Strontium.
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  Data: <searchLink fieldCode="AR" term="%22Feng%2C+Yilong%22">Feng, Yilong</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Lu%2C+Zhenya%22">Lu, Zhenya</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> zhylu@scut.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Lv%2C+Ming%22">Lv, Ming</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> immlv@scut.edu.cn</i>
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  Data: <searchLink fieldCode="JN" term="%22Materials+%281996-1944%29%22">Materials (1996-1944)</searchLink>. Apr2025, Vol. 18 Issue 8, p1687. 12p.
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  Data: <searchLink fieldCode="DE" term="%22Radiofrequency+sputtering%22">Radiofrequency sputtering</searchLink><br /><searchLink fieldCode="DE" term="%22Magnetron+sputtering%22">Magnetron sputtering</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Substrates+%28Materials+science%29%22">Substrates (Materials science)</searchLink><br /><searchLink fieldCode="DE" term="%22Dielectric+properties%22">Dielectric properties</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Magnetron sputtering allows for the accurate estimation of film thickness. Strontium titanate (STO) thin films were deposited on Nb-doped STO substrates using radiofrequency magnetron sputtering technology. The microstructures and dielectric properties of STO thin films were investigated. X-ray diffraction (XRD) analysis indicates that uniform polycrystalline STO films were obtained after thermal annealing at 650 °C. The films exhibit a significant correlation between thickness, annealing temperature, and breakdown field strength. The optimal film with a thickness of 1150 nm achieves a capacitance density of 1688 pF/mm2 and a breakdown field strength of 270 kV/mm. Additionally, STO films annealed at 650 °C maintained their capacitance value within ±15% across a temperature range of −55 °C to 125 °C. These results highlight the potential of STO thin films for high-performance capacitor applications. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Materials (1996-1944) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.3390/ma18081687
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      – Code: eng
        Text: English
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      Pagination:
        PageCount: 12
        StartPage: 1687
    Subjects:
      – SubjectFull: Radiofrequency sputtering
        Type: general
      – SubjectFull: Magnetron sputtering
        Type: general
      – SubjectFull: Thin films
        Type: general
      – SubjectFull: Substrates (Materials science)
        Type: general
      – SubjectFull: Dielectric properties
        Type: general
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      – TitleFull: High Capacitance Density and Thermal Stability in Strontium.
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            NameFull: Feng, Yilong
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            NameFull: Lu, Zhenya
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            NameFull: Lv, Ming
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            – D: 15
              M: 04
              Text: Apr2025
              Type: published
              Y: 2025
          Identifiers:
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              Value: 19961944
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              Value: 18
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              Value: 8
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            – TitleFull: Materials (1996-1944)
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