Enhancement of Electro-Optical Characteristics in GaN-Based Ultraviolet Laser Diodes Through Upper Optical Confinement Structure Design.
Saved in:
| Title: | Enhancement of Electro-Optical Characteristics in GaN-Based Ultraviolet Laser Diodes Through Upper Optical Confinement Structure Design. |
|---|---|
| Authors: | Li, Zhiwei1,2 (AUTHOR) zwli@semi.ac.cn, Yang, Jing2,3 (AUTHOR) yulina@semi.ac.cn, Yu, Lina1,2,3 (AUTHOR), Sun, Linjun1,2 (AUTHOR), Wu, Min1,2 (AUTHOR), Li, Weijun1,2,3 (AUTHOR) |
| Source: | Nanomaterials (2079-4991). Apr2025, Vol. 15 Issue 8, p596. 9p. |
| Subjects: | Ultraviolet lasers, Semiconductor lasers, Absorption |
| Abstract: | Two series of laser diodes with different AlGaN cladding layers were investigated, and it was found that the internal absorption loss was reduced by using a u-AlGaN and p-AlGaN composite upper cladding layer, and the performance of LD was improved. The optimized thickness of u-AlGaN is related to the waveguide layer structure of LDs. For LDs with a thick waveguide layer, the u-AlGaN cladding layer should be thinner to achieve high hole concentration and high hole injection efficiency. For LDs with a thin waveguide layer, the u-AlGaN cladding layer can be thick to suppress the internal absorption loss. Thus, a composite upper waveguide structure with a thinner waveguide layer, a thicker u-AlGaN cladding layer, and a p-AlGaN cladding layer is an optimized structure for short waveguide UV LDs due to lower carrier loss and absorption loss. [ABSTRACT FROM AUTHOR] |
| Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
|
Full text is not displayed to guests.
Login for full access.
|
|
| Abstract: | Two series of laser diodes with different AlGaN cladding layers were investigated, and it was found that the internal absorption loss was reduced by using a u-AlGaN and p-AlGaN composite upper cladding layer, and the performance of LD was improved. The optimized thickness of u-AlGaN is related to the waveguide layer structure of LDs. For LDs with a thick waveguide layer, the u-AlGaN cladding layer should be thinner to achieve high hole concentration and high hole injection efficiency. For LDs with a thin waveguide layer, the u-AlGaN cladding layer can be thick to suppress the internal absorption loss. Thus, a composite upper waveguide structure with a thinner waveguide layer, a thicker u-AlGaN cladding layer, and a p-AlGaN cladding layer is an optimized structure for short waveguide UV LDs due to lower carrier loss and absorption loss. [ABSTRACT FROM AUTHOR] |
|---|---|
| ISSN: | 20794991 |
| DOI: | 10.3390/nano15080596 |
