From flexibility to functionality: N-doped Sb films on PEEK for next-gen memory devices.
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| Title: | From flexibility to functionality: N-doped Sb films on PEEK for next-gen memory devices. |
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| Authors: | Wang, Xin1 (AUTHOR) 2904275528@qq.com, Zhang, Jianpu1 (AUTHOR), Zhao, Shijie1 (AUTHOR), Wang, Kaidi1 (AUTHOR), Qiu, Ruixin1 (AUTHOR) |
| Source: | Journal of Materials Science. Apr2025, Vol. 60 Issue 16, p6922-6933. 12p. |
| Subjects: | Strains & stresses (Mechanics), Phase change memory, Polyether ether ketone, Fatigue limit, Bending stresses |
| Abstract: | This study presents a significant advancement in flexible phase change memory devices by developing nitrogen-doped antimony (Sb94.4N5.6) films on polyether ether ketone substrates via radio-frequency magnetron sputtering. The Sb–N bonds, confirmed by XPS analysis, significantly enhance thermal stability with a crystallization temperature of 193 °C, surpassing conventional Sb-based materials. Systematic investigations reveal that mechanical stress from bending (up to 10,000 cycles), stretching (20% strain), and compression (7 × 10⁻4 GPa) induces grain refinement, increasing crystalline resistance, while maintaining a stable resistance contrast (> 10) between amorphous and crystalline states. XRD and SEM analyses demonstrate that stress-induced lattice strain and grain boundary optimization improve structural durability without surface cracks. The Sb94.4N5.6-based device achieves reliable Set/Reset operations at 100 ns pulses in both flat and bent states, with reduced threshold voltages (1.74 V flat, 2.25 V bent) and minimal resistance drift (α = 0.01101). The film exhibits predictable piezoresistive behavior on human joints, proving its adaptability to dynamic deformations. These results highlight the film's superior fatigue resistance, mechanical flexibility, and rapid switching capabilities, positioning it as a potential material for next-generation wearable electronics, electronic skins, and intelligent medical systems. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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| Abstract: | This study presents a significant advancement in flexible phase change memory devices by developing nitrogen-doped antimony (Sb94.4N5.6) films on polyether ether ketone substrates via radio-frequency magnetron sputtering. The Sb–N bonds, confirmed by XPS analysis, significantly enhance thermal stability with a crystallization temperature of 193 °C, surpassing conventional Sb-based materials. Systematic investigations reveal that mechanical stress from bending (up to 10,000 cycles), stretching (20% strain), and compression (7 × 10⁻4 GPa) induces grain refinement, increasing crystalline resistance, while maintaining a stable resistance contrast (> 10) between amorphous and crystalline states. XRD and SEM analyses demonstrate that stress-induced lattice strain and grain boundary optimization improve structural durability without surface cracks. The Sb94.4N5.6-based device achieves reliable Set/Reset operations at 100 ns pulses in both flat and bent states, with reduced threshold voltages (1.74 V flat, 2.25 V bent) and minimal resistance drift (α = 0.01101). The film exhibits predictable piezoresistive behavior on human joints, proving its adaptability to dynamic deformations. These results highlight the film's superior fatigue resistance, mechanical flexibility, and rapid switching capabilities, positioning it as a potential material for next-generation wearable electronics, electronic skins, and intelligent medical systems. [ABSTRACT FROM AUTHOR] |
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| ISSN: | 00222461 |
| DOI: | 10.1007/s10853-025-10852-3 |
