From flexibility to functionality: N-doped Sb films on PEEK for next-gen memory devices.
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| Title: | From flexibility to functionality: N-doped Sb films on PEEK for next-gen memory devices. |
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| Authors: | Wang, Xin1 (AUTHOR) 2904275528@qq.com, Zhang, Jianpu1 (AUTHOR), Zhao, Shijie1 (AUTHOR), Wang, Kaidi1 (AUTHOR), Qiu, Ruixin1 (AUTHOR) |
| Source: | Journal of Materials Science. Apr2025, Vol. 60 Issue 16, p6922-6933. 12p. |
| Subjects: | Strains & stresses (Mechanics), Phase change memory, Polyether ether ketone, Fatigue limit, Bending stresses |
| Abstract: | This study presents a significant advancement in flexible phase change memory devices by developing nitrogen-doped antimony (Sb94.4N5.6) films on polyether ether ketone substrates via radio-frequency magnetron sputtering. The Sb–N bonds, confirmed by XPS analysis, significantly enhance thermal stability with a crystallization temperature of 193 °C, surpassing conventional Sb-based materials. Systematic investigations reveal that mechanical stress from bending (up to 10,000 cycles), stretching (20% strain), and compression (7 × 10⁻4 GPa) induces grain refinement, increasing crystalline resistance, while maintaining a stable resistance contrast (> 10) between amorphous and crystalline states. XRD and SEM analyses demonstrate that stress-induced lattice strain and grain boundary optimization improve structural durability without surface cracks. The Sb94.4N5.6-based device achieves reliable Set/Reset operations at 100 ns pulses in both flat and bent states, with reduced threshold voltages (1.74 V flat, 2.25 V bent) and minimal resistance drift (α = 0.01101). The film exhibits predictable piezoresistive behavior on human joints, proving its adaptability to dynamic deformations. These results highlight the film's superior fatigue resistance, mechanical flexibility, and rapid switching capabilities, positioning it as a potential material for next-generation wearable electronics, electronic skins, and intelligent medical systems. [ABSTRACT FROM AUTHOR] |
| Copyright of Journal of Materials Science is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
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| Header | DbId: egs DbLabel: Engineering Source An: 184872290 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: From flexibility to functionality: N-doped Sb films on PEEK for next-gen memory devices. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Wang%2C+Xin%22">Wang, Xin</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> 2904275528@qq.com</i><br /><searchLink fieldCode="AR" term="%22Zhang%2C+Jianpu%22">Zhang, Jianpu</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhao%2C+Shijie%22">Zhao, Shijie</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Wang%2C+Kaidi%22">Wang, Kaidi</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Qiu%2C+Ruixin%22">Qiu, Ruixin</searchLink><relatesTo>1</relatesTo> (AUTHOR) – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%22">Journal of Materials Science</searchLink>. Apr2025, Vol. 60 Issue 16, p6922-6933. 12p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Strains+%26+stresses+%28Mechanics%29%22">Strains & stresses (Mechanics)</searchLink><br /><searchLink fieldCode="DE" term="%22Phase+change+memory%22">Phase change memory</searchLink><br /><searchLink fieldCode="DE" term="%22Polyether+ether+ketone%22">Polyether ether ketone</searchLink><br /><searchLink fieldCode="DE" term="%22Fatigue+limit%22">Fatigue limit</searchLink><br /><searchLink fieldCode="DE" term="%22Bending+stresses%22">Bending stresses</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: This study presents a significant advancement in flexible phase change memory devices by developing nitrogen-doped antimony (Sb94.4N5.6) films on polyether ether ketone substrates via radio-frequency magnetron sputtering. The Sb–N bonds, confirmed by XPS analysis, significantly enhance thermal stability with a crystallization temperature of 193 °C, surpassing conventional Sb-based materials. Systematic investigations reveal that mechanical stress from bending (up to 10,000 cycles), stretching (20% strain), and compression (7 × 10⁻4 GPa) induces grain refinement, increasing crystalline resistance, while maintaining a stable resistance contrast (> 10) between amorphous and crystalline states. XRD and SEM analyses demonstrate that stress-induced lattice strain and grain boundary optimization improve structural durability without surface cracks. The Sb94.4N5.6-based device achieves reliable Set/Reset operations at 100 ns pulses in both flat and bent states, with reduced threshold voltages (1.74 V flat, 2.25 V bent) and minimal resistance drift (α = 0.01101). The film exhibits predictable piezoresistive behavior on human joints, proving its adaptability to dynamic deformations. These results highlight the film's superior fatigue resistance, mechanical flexibility, and rapid switching capabilities, positioning it as a potential material for next-generation wearable electronics, electronic skins, and intelligent medical systems. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Journal of Materials Science is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1007/s10853-025-10852-3 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 12 StartPage: 6922 Subjects: – SubjectFull: Strains & stresses (Mechanics) Type: general – SubjectFull: Phase change memory Type: general – SubjectFull: Polyether ether ketone Type: general – SubjectFull: Fatigue limit Type: general – SubjectFull: Bending stresses Type: general Titles: – TitleFull: From flexibility to functionality: N-doped Sb films on PEEK for next-gen memory devices. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Wang, Xin – PersonEntity: Name: NameFull: Zhang, Jianpu – PersonEntity: Name: NameFull: Zhao, Shijie – PersonEntity: Name: NameFull: Wang, Kaidi – PersonEntity: Name: NameFull: Qiu, Ruixin IsPartOfRelationships: – BibEntity: Dates: – D: 22 M: 04 Text: Apr2025 Type: published Y: 2025 Identifiers: – Type: issn-print Value: 00222461 Numbering: – Type: volume Value: 60 – Type: issue Value: 16 Titles: – TitleFull: Journal of Materials Science Type: main |
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