Modification of TiO2 template with In2S3 for quasi-epitaxial growth of Sb2S3 thin film solar cells.
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| Title: | Modification of TiO |
|---|---|
| Authors: | Zhan, Ya-Lu1 (AUTHOR), Li, Hu1 (AUTHOR), Cai, Jin-Rui1 (AUTHOR), Zhang, Jun-Cai1 (AUTHOR), Cai, Li-Ping1,2 (AUTHOR) cailp108@163.com, Lin, Li-Mei1,2 (AUTHOR) linlm@fjnu.edu.cn, Huang, Zhi-Ping1 (AUTHOR), Chen, Gui-Lin1,2 (AUTHOR) glchen@fjnu.edu.cn |
| Source: | Semiconductor Science & Technology. May2025, Vol. 40 Issue 5, p1-9. 9p. |
| Subjects: | Solar cells, Band gaps, Electron transport, Rock groups, Thin films |
| Abstract: | Thin film solar cells based on the wide band gap absorber antimony sulfide (Sb2S3) have great application potential and prospect. Typical Sb2S3 thin-film solar cells usually use a low-cost solution method (such as hydrothermal deposition) to prepare the light-absorbing material, and use a toxic CdS film with a narrow band gap (about 2.4 eV) as the electron transport layer (ETL). TiO2, a non-toxic ETL alternative with a wide band gap (3.1–3.4 eV), fulfills the photoelectric needs of the ETL. But when the TiO2 is used as a template for Sb2S3 deposition, it shows an island of uneven growth. Herein, an ion layer adsorption and reaction method was used to modify the surface of TiO2 with an ultra-thin layer of In2S3, thereby improving the nucleation and growth characteristics of Sb2S3 during hydrothermal deposition. In this way, the Sb2S3 film forms a compact and specular state on the TiO2 surface similar to that on the CdS surface, realizing the quasi-epitaxial growth of the Sb2S3 film, which provides a new solution for efficient and environmentally friendly solar cells. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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