Bonded GaN-Si pn Heterojunctions Fabricated Using Transferred GaN Membranes.
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| Title: | Bonded GaN-Si pn Heterojunctions Fabricated Using Transferred GaN Membranes. |
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| Authors: | Blanton, Eric W.1 (AUTHOR) eric.blanton.5.ctr@us.af.mil, Nikodemski, Stefan1 (AUTHOR), Grupen, Matt2 (AUTHOR), Glavin, Nicholas R.3 (AUTHOR), Snure, Michael2 (AUTHOR) |
| Source: | Journal of Electronic Materials. Jun2025, Vol. 54 Issue 6, p4343-4349. 7p. |
| Subjects: | Transmission electron microscopes, Gallium nitride, Substrates (Materials science), Heterojunctions, Diodes |
| Abstract: | The ability to transfer and bond GaN membranes can enable new devices and new ways to optimize performance. Here, we demonstrate fabrication of GaN-Si pn diodes using van der Waals (vdW) lift-off and bonding of GaN membranes and assess the critical processing and interface challenges with this approach. Freestanding n-GaN layers were produced by epitaxial lift-off from sp2-bonded boron nitride-sapphire templates followed by direct bonding to p+-Si substrates. Fabricated diodes exhibited high on/off current ratios up to 8 × 107, ideality factors of 1.8, and low series resistance. Annealing bonded heterojunctions at 400°C improved the ideality factor compared to as-bonded devices. Transmission electron microscope imaging revealed a well-bonded interface with only a 2-nm-thick oxide interlayer. Current-voltage analysis and device simulations indicated that the observed transport mechanism is due to recombination at defects in the GaN near the bonded interface. These results pave the way for a better understanding of bonded GaN junctions and how to improve their quality. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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| Abstract: | The ability to transfer and bond GaN membranes can enable new devices and new ways to optimize performance. Here, we demonstrate fabrication of GaN-Si pn diodes using van der Waals (vdW) lift-off and bonding of GaN membranes and assess the critical processing and interface challenges with this approach. Freestanding n-GaN layers were produced by epitaxial lift-off from sp2-bonded boron nitride-sapphire templates followed by direct bonding to p+-Si substrates. Fabricated diodes exhibited high on/off current ratios up to 8 × 107, ideality factors of 1.8, and low series resistance. Annealing bonded heterojunctions at 400°C improved the ideality factor compared to as-bonded devices. Transmission electron microscope imaging revealed a well-bonded interface with only a 2-nm-thick oxide interlayer. Current-voltage analysis and device simulations indicated that the observed transport mechanism is due to recombination at defects in the GaN near the bonded interface. These results pave the way for a better understanding of bonded GaN junctions and how to improve their quality. [ABSTRACT FROM AUTHOR] |
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| ISSN: | 03615235 |
| DOI: | 10.1007/s11664-025-11854-2 |
