View in EDS HTML Full Text PDF Full Text

Bonded GaN-Si pn Heterojunctions Fabricated Using Transferred GaN Membranes.

Saved in:
Bibliographic Details
Title: Bonded GaN-Si pn Heterojunctions Fabricated Using Transferred GaN Membranes.
Authors: Blanton, Eric W.1 (AUTHOR) eric.blanton.5.ctr@us.af.mil, Nikodemski, Stefan1 (AUTHOR), Grupen, Matt2 (AUTHOR), Glavin, Nicholas R.3 (AUTHOR), Snure, Michael2 (AUTHOR)
Source: Journal of Electronic Materials. Jun2025, Vol. 54 Issue 6, p4343-4349. 7p.
Subjects: Transmission electron microscopes, Gallium nitride, Substrates (Materials science), Heterojunctions, Diodes
Abstract: The ability to transfer and bond GaN membranes can enable new devices and new ways to optimize performance. Here, we demonstrate fabrication of GaN-Si pn diodes using van der Waals (vdW) lift-off and bonding of GaN membranes and assess the critical processing and interface challenges with this approach. Freestanding n-GaN layers were produced by epitaxial lift-off from sp2-bonded boron nitride-sapphire templates followed by direct bonding to p+-Si substrates. Fabricated diodes exhibited high on/off current ratios up to 8 × 107, ideality factors of 1.8, and low series resistance. Annealing bonded heterojunctions at 400°C improved the ideality factor compared to as-bonded devices. Transmission electron microscope imaging revealed a well-bonded interface with only a 2-nm-thick oxide interlayer. Current-voltage analysis and device simulations indicated that the observed transport mechanism is due to recombination at defects in the GaN near the bonded interface. These results pave the way for a better understanding of bonded GaN junctions and how to improve their quality. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Electronic Materials is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
Full text is not displayed to guests.
FullText Links:
  – Type: pdflink
Text:
  Availability: 1
Header DbId: egs
DbLabel: Engineering Source
An: 185069769
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Bonded GaN-Si pn Heterojunctions Fabricated Using Transferred GaN Membranes.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Blanton%2C+Eric+W%2E%22">Blanton, Eric W.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> eric.blanton.5.ctr@us.af.mil</i><br /><searchLink fieldCode="AR" term="%22Nikodemski%2C+Stefan%22">Nikodemski, Stefan</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Grupen%2C+Matt%22">Grupen, Matt</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Glavin%2C+Nicholas+R%2E%22">Glavin, Nicholas R.</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Snure%2C+Michael%22">Snure, Michael</searchLink><relatesTo>2</relatesTo> (AUTHOR)
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Journal+of+Electronic+Materials%22">Journal of Electronic Materials</searchLink>. Jun2025, Vol. 54 Issue 6, p4343-4349. 7p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Transmission+electron+microscopes%22">Transmission electron microscopes</searchLink><br /><searchLink fieldCode="DE" term="%22Gallium+nitride%22">Gallium nitride</searchLink><br /><searchLink fieldCode="DE" term="%22Substrates+%28Materials+science%29%22">Substrates (Materials science)</searchLink><br /><searchLink fieldCode="DE" term="%22Heterojunctions%22">Heterojunctions</searchLink><br /><searchLink fieldCode="DE" term="%22Diodes%22">Diodes</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: The ability to transfer and bond GaN membranes can enable new devices and new ways to optimize performance. Here, we demonstrate fabrication of GaN-Si pn diodes using van der Waals (vdW) lift-off and bonding of GaN membranes and assess the critical processing and interface challenges with this approach. Freestanding n-GaN layers were produced by epitaxial lift-off from sp2-bonded boron nitride-sapphire templates followed by direct bonding to p+-Si substrates. Fabricated diodes exhibited high on/off current ratios up to 8 × 107, ideality factors of 1.8, and low series resistance. Annealing bonded heterojunctions at 400°C improved the ideality factor compared to as-bonded devices. Transmission electron microscope imaging revealed a well-bonded interface with only a 2-nm-thick oxide interlayer. Current-voltage analysis and device simulations indicated that the observed transport mechanism is due to recombination at defects in the GaN near the bonded interface. These results pave the way for a better understanding of bonded GaN junctions and how to improve their quality. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Journal of Electronic Materials is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=185069769
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1007/s11664-025-11854-2
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 7
        StartPage: 4343
    Subjects:
      – SubjectFull: Transmission electron microscopes
        Type: general
      – SubjectFull: Gallium nitride
        Type: general
      – SubjectFull: Substrates (Materials science)
        Type: general
      – SubjectFull: Heterojunctions
        Type: general
      – SubjectFull: Diodes
        Type: general
    Titles:
      – TitleFull: Bonded GaN-Si pn Heterojunctions Fabricated Using Transferred GaN Membranes.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Blanton, Eric W.
      – PersonEntity:
          Name:
            NameFull: Nikodemski, Stefan
      – PersonEntity:
          Name:
            NameFull: Grupen, Matt
      – PersonEntity:
          Name:
            NameFull: Glavin, Nicholas R.
      – PersonEntity:
          Name:
            NameFull: Snure, Michael
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 06
              Text: Jun2025
              Type: published
              Y: 2025
          Identifiers:
            – Type: issn-print
              Value: 03615235
          Numbering:
            – Type: volume
              Value: 54
            – Type: issue
              Value: 6
          Titles:
            – TitleFull: Journal of Electronic Materials
              Type: main
ResultId 1