High-Performance Si1−xSnx/Si Avalanche Photodiode on Si Platform at Room Temperature.
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| Title: | High-Performance Si |
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| Authors: | Kumar, Harshvardhan1 (AUTHOR) harshvardhan.kumar@lnmiit.ac.in, Sinha, Advaita1 (AUTHOR), Yang, Chushou2 (AUTHOR) |
| Source: | Journal of Electronic Materials. Jun2025, Vol. 54 Issue 6, p4703-4717. 15p. |
| Subjects: | Silicon alloys, Absorption coefficients, Tin, Noise control, Low voltage systems |
| Abstract: | In this work, we present a novel avalanche photodiode (APD) that utilizes the Si 1 - x Sn x -on-silicon (SiSn-on-Si) platform to enable short-wave infrared (SWIR) operation. This work reports the first proof of the Si 1 - x Sn x alloy-based APD. Here, we propose two device structures—p+-i-p-i-n+ (device D1) and n+-i-n-i-p+ (device D2)—and we use COMSOL Multiphysics to analyze their performance. With the insertion of Sn into the Si 1 - x Sn x alloy, the bandgap energy decreases, and the detection wavelength is redshifted toward a longer wavelength. As a result, this work presents the breakthrough of Si-based detectors, demonstrating significant advancements in the field. Moreover, the high absorption coefficient of the Si 1 - x Sn x alloy over pure Si results in high responsivity. The separate absorption, charge, and multiplication (SACM) device structure allows for a substantial performance improvement, with device D1 achieving a high multiplication gain of over 77 and device D2 achieving a multiplication gain of over 80 at a wavelength of 1310 nm and a temperature of 300 K. Our proposed SiSn-on-Si APD shows a significant reduction in excess noise factor compared to the In0.52Al0.48As device. In addition, when compared to previously reported Si/Ge APDs, the SiSn-on-Si APD demonstrates superior performance in terms of gain, responsivity, and the low bias voltage required for operation. These findings, using the cost-effective SiSn-on-Si platform, provide a pathway for the future development of high-performance Si-based APDs for use in the SWIR bands. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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| Abstract: | In this work, we present a novel avalanche photodiode (APD) that utilizes the Si 1 - x Sn x -on-silicon (SiSn-on-Si) platform to enable short-wave infrared (SWIR) operation. This work reports the first proof of the Si 1 - x Sn x alloy-based APD. Here, we propose two device structures—p+-i-p-i-n+ (device D1) and n+-i-n-i-p+ (device D2)—and we use COMSOL Multiphysics to analyze their performance. With the insertion of Sn into the Si 1 - x Sn x alloy, the bandgap energy decreases, and the detection wavelength is redshifted toward a longer wavelength. As a result, this work presents the breakthrough of Si-based detectors, demonstrating significant advancements in the field. Moreover, the high absorption coefficient of the Si 1 - x Sn x alloy over pure Si results in high responsivity. The separate absorption, charge, and multiplication (SACM) device structure allows for a substantial performance improvement, with device D1 achieving a high multiplication gain of over 77 and device D2 achieving a multiplication gain of over 80 at a wavelength of 1310 nm and a temperature of 300 K. Our proposed SiSn-on-Si APD shows a significant reduction in excess noise factor compared to the In0.52Al0.48As device. In addition, when compared to previously reported Si/Ge APDs, the SiSn-on-Si APD demonstrates superior performance in terms of gain, responsivity, and the low bias voltage required for operation. These findings, using the cost-effective SiSn-on-Si platform, provide a pathway for the future development of high-performance Si-based APDs for use in the SWIR bands. [ABSTRACT FROM AUTHOR] |
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| ISSN: | 03615235 |
| DOI: | 10.1007/s11664-025-11885-9 |
