High-Performance Si1−xSnx/Si Avalanche Photodiode on Si Platform at Room Temperature.
Saved in:
| Title: | High-Performance Si |
|---|---|
| Authors: | Kumar, Harshvardhan1 (AUTHOR) harshvardhan.kumar@lnmiit.ac.in, Sinha, Advaita1 (AUTHOR), Yang, Chushou2 (AUTHOR) |
| Source: | Journal of Electronic Materials. Jun2025, Vol. 54 Issue 6, p4703-4717. 15p. |
| Subjects: | Silicon alloys, Absorption coefficients, Tin, Noise control, Low voltage systems |
| Abstract: | In this work, we present a novel avalanche photodiode (APD) that utilizes the Si 1 - x Sn x -on-silicon (SiSn-on-Si) platform to enable short-wave infrared (SWIR) operation. This work reports the first proof of the Si 1 - x Sn x alloy-based APD. Here, we propose two device structures—p+-i-p-i-n+ (device D1) and n+-i-n-i-p+ (device D2)—and we use COMSOL Multiphysics to analyze their performance. With the insertion of Sn into the Si 1 - x Sn x alloy, the bandgap energy decreases, and the detection wavelength is redshifted toward a longer wavelength. As a result, this work presents the breakthrough of Si-based detectors, demonstrating significant advancements in the field. Moreover, the high absorption coefficient of the Si 1 - x Sn x alloy over pure Si results in high responsivity. The separate absorption, charge, and multiplication (SACM) device structure allows for a substantial performance improvement, with device D1 achieving a high multiplication gain of over 77 and device D2 achieving a multiplication gain of over 80 at a wavelength of 1310 nm and a temperature of 300 K. Our proposed SiSn-on-Si APD shows a significant reduction in excess noise factor compared to the In0.52Al0.48As device. In addition, when compared to previously reported Si/Ge APDs, the SiSn-on-Si APD demonstrates superior performance in terms of gain, responsivity, and the low bias voltage required for operation. These findings, using the cost-effective SiSn-on-Si platform, provide a pathway for the future development of high-performance Si-based APDs for use in the SWIR bands. [ABSTRACT FROM AUTHOR] |
| Copyright of Journal of Electronic Materials is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
|
Full text is not displayed to guests.
Login for full access.
|
|
| FullText | Links: – Type: pdflink Text: Availability: 1 |
|---|---|
| Header | DbId: egs DbLabel: Engineering Source An: 185069782 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
| IllustrationInfo | |
| Items | – Name: Title Label: Title Group: Ti Data: High-Performance Si<subscript>1−x</subscript>Sn<subscript>x</subscript>/Si Avalanche Photodiode on Si Platform at Room Temperature. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Kumar%2C+Harshvardhan%22">Kumar, Harshvardhan</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> harshvardhan.kumar@lnmiit.ac.in</i><br /><searchLink fieldCode="AR" term="%22Sinha%2C+Advaita%22">Sinha, Advaita</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Yang%2C+Chushou%22">Yang, Chushou</searchLink><relatesTo>2</relatesTo> (AUTHOR) – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+Electronic+Materials%22">Journal of Electronic Materials</searchLink>. Jun2025, Vol. 54 Issue 6, p4703-4717. 15p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Silicon+alloys%22">Silicon alloys</searchLink><br /><searchLink fieldCode="DE" term="%22Absorption+coefficients%22">Absorption coefficients</searchLink><br /><searchLink fieldCode="DE" term="%22Tin%22">Tin</searchLink><br /><searchLink fieldCode="DE" term="%22Noise+control%22">Noise control</searchLink><br /><searchLink fieldCode="DE" term="%22Low+voltage+systems%22">Low voltage systems</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: In this work, we present a novel avalanche photodiode (APD) that utilizes the Si 1 - x Sn x -on-silicon (SiSn-on-Si) platform to enable short-wave infrared (SWIR) operation. This work reports the first proof of the Si 1 - x Sn x alloy-based APD. Here, we propose two device structures—p+-i-p-i-n+ (device D1) and n+-i-n-i-p+ (device D2)—and we use COMSOL Multiphysics to analyze their performance. With the insertion of Sn into the Si 1 - x Sn x alloy, the bandgap energy decreases, and the detection wavelength is redshifted toward a longer wavelength. As a result, this work presents the breakthrough of Si-based detectors, demonstrating significant advancements in the field. Moreover, the high absorption coefficient of the Si 1 - x Sn x alloy over pure Si results in high responsivity. The separate absorption, charge, and multiplication (SACM) device structure allows for a substantial performance improvement, with device D1 achieving a high multiplication gain of over 77 and device D2 achieving a multiplication gain of over 80 at a wavelength of 1310 nm and a temperature of 300 K. Our proposed SiSn-on-Si APD shows a significant reduction in excess noise factor compared to the In0.52Al0.48As device. In addition, when compared to previously reported Si/Ge APDs, the SiSn-on-Si APD demonstrates superior performance in terms of gain, responsivity, and the low bias voltage required for operation. These findings, using the cost-effective SiSn-on-Si platform, provide a pathway for the future development of high-performance Si-based APDs for use in the SWIR bands. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Journal of Electronic Materials is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=185069782 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1007/s11664-025-11885-9 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 15 StartPage: 4703 Subjects: – SubjectFull: Silicon alloys Type: general – SubjectFull: Absorption coefficients Type: general – SubjectFull: Tin Type: general – SubjectFull: Noise control Type: general – SubjectFull: Low voltage systems Type: general Titles: – TitleFull: High-Performance Si1−xSnx/Si Avalanche Photodiode on Si Platform at Room Temperature. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Kumar, Harshvardhan – PersonEntity: Name: NameFull: Sinha, Advaita – PersonEntity: Name: NameFull: Yang, Chushou IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 06 Text: Jun2025 Type: published Y: 2025 Identifiers: – Type: issn-print Value: 03615235 Numbering: – Type: volume Value: 54 – Type: issue Value: 6 Titles: – TitleFull: Journal of Electronic Materials Type: main |
| ResultId | 1 |
