Enhancement of fMAX/fT in α-Ga2O3 MOSFET with ultra-wide bandgap MgO and CaO blocking layers.
Saved in:
| Title: | Enhancement of f |
|---|---|
| Authors: | Fletcher, A. S. Augustine1 (AUTHOR) augustinefletcher@gmail.com, Murugapandiyan, P.2 (AUTHOR), Mohanbabu, A.3 (AUTHOR), Dhanasekar, S.4 (AUTHOR), Saranya, G.5 (AUTHOR) |
| Source: | Applied Physics A: Materials Science & Processing. May2025, Vol. 131 Issue 5, p1-14. 14p. |
| Subjects: | Metal oxide semiconductor field-effect transistors, Electron mobility, Lime (Minerals), Hafnium oxide, Stray currents |
| Abstract: | This study analyzes the RF and DC characteristics of a novel α-Ga2O3 (Gallium oxide) MOSFET (Metal oxide semiconductor field effect transistor) featuring ultra-wide bandgap Magnesium Oxide (MgO) and Calcium Oxide (CaO) back barriers using Atlas TCAD 2D simulations. The main contribution of this work lies in demonstrating the effectiveness of using MgO and CaO as back barriers to significantly enhance electron confinement, improve electron mobility, and boost RF performance (fT and fMax) in α-Ga2O3 MOSFETs, which addresses key limitations observed in conventional designs. The device incorporates a high-k Hafnium oxide (HfO2) dielectric layer to minimize gate leakage current. Additionally, the MgO back barrier serves to confine electrons to the Si-doped α-Ga2O3 channel, improving electron mobility and enhancing the overall RF performance. The proposed HfO2/α-Ga2O3/MgO/Sapphire MOSFET demonstrates a peak drain-to-source current (IDS max) of 42 mA/mm, a high transconductance factor (gm) of 520 mS/mm, and a large output conductance of 5.7 mΩ⁻1/mm. The device exhibits a significant improvement in RF performance with an fT of 5.8 GHz and fMax of 13 GHz compared to conventional α-Ga2O3 MOSFETs. Furthermore, the device shows a remarkable ION/IOFF ratio of 9.8×10⁶, an electric field of 3.3 MV/cm, and a transit angular frequency of 22.5 GHz. These results suggest that the HfO2/α-Ga2O3/MgO/Sapphire-based MOSFET is a promising candidate for future high-speed and high-power electronic applications. [ABSTRACT FROM AUTHOR] |
| Copyright of Applied Physics A: Materials Science & Processing is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
|
Full text is not displayed to guests.
Login for full access.
|
|
| Abstract: | This study analyzes the RF and DC characteristics of a novel α-Ga2O3 (Gallium oxide) MOSFET (Metal oxide semiconductor field effect transistor) featuring ultra-wide bandgap Magnesium Oxide (MgO) and Calcium Oxide (CaO) back barriers using Atlas TCAD 2D simulations. The main contribution of this work lies in demonstrating the effectiveness of using MgO and CaO as back barriers to significantly enhance electron confinement, improve electron mobility, and boost RF performance (fT and fMax) in α-Ga2O3 MOSFETs, which addresses key limitations observed in conventional designs. The device incorporates a high-k Hafnium oxide (HfO2) dielectric layer to minimize gate leakage current. Additionally, the MgO back barrier serves to confine electrons to the Si-doped α-Ga2O3 channel, improving electron mobility and enhancing the overall RF performance. The proposed HfO2/α-Ga2O3/MgO/Sapphire MOSFET demonstrates a peak drain-to-source current (IDS max) of 42 mA/mm, a high transconductance factor (gm) of 520 mS/mm, and a large output conductance of 5.7 mΩ⁻1/mm. The device exhibits a significant improvement in RF performance with an fT of 5.8 GHz and fMax of 13 GHz compared to conventional α-Ga2O3 MOSFETs. Furthermore, the device shows a remarkable ION/IOFF ratio of 9.8×10⁶, an electric field of 3.3 MV/cm, and a transit angular frequency of 22.5 GHz. These results suggest that the HfO2/α-Ga2O3/MgO/Sapphire-based MOSFET is a promising candidate for future high-speed and high-power electronic applications. [ABSTRACT FROM AUTHOR] |
|---|---|
| ISSN: | 09478396 |
| DOI: | 10.1007/s00339-025-08512-z |
