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High-sensitivity silicon nitride optical temperature sensor based on cascaded Mach-Zehnder interferometers.

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Title: High-sensitivity silicon nitride optical temperature sensor based on cascaded Mach-Zehnder interferometers.
Authors: Chen, Li-Yu1 (AUTHOR), Chen, Yong-Jun1 (AUTHOR), Wu, De-Sheng1 (AUTHOR), Huang, Wen-Hsien2 (AUTHOR), Wang, Chun-Ta1 (AUTHOR) ctwang@mail.nsysu.edu.tw
Source: Optical Materials. Aug2025, Vol. 165, pN.PAG-N.PAG. 1p.
Subjects: Temperature sensors, Light filters, Optical losses, Optical sensors, Temperature measurements
Abstract: This study presents the design, fabrication, and characterization of a high-sensitivity optical temperature sensor utilizing cascaded Mach-Zehnder interferometers (MZIs) on a silicon nitride on an insulator platform. Silicon nitride is an optimal material for waveguides due to its compatibility with complementary metal-oxide semiconductor (CMOS) technology, low optical losses, and extensive operational spectral range, despite its relatively low thermal-optic coefficient (TOC). The sensor comprises two MZI structures with similar free spectral ranges (FSRs), but differing sensitivities achieved through tailored geometries. The device exhibits a markedly enhanced temperature sensitivity compared to conventional silicon nitride- and silicon-based sensors. The measurements yielded a temperature sensitivity of 710 p.m./°C, confirming the sensitivity enhancement over traditional MZI configurations. In addition to temperature sensing, the demonstrated cascaded MZI structure is also promising for thermo-optic tuning, optical filtering, and switching applications, especially in systems where silicon nitride is preferred due to its broadband transparency and low loss. The proposed sensor represents a robust solution for precise temperature measurements in industrial, medical, and environmental applications. • This study designs a high-sensitivity optical temperature sensor using cascaded Mach-Zehnder interferometers (MZIs). • The cascaded MZIs were fabricated on a silicon nitride on an insulator platform. • The silicon nitride waveguide platform enables a wide operational spectral range. • The proposed temperature sensor exhibits an enhanced temperature sensitivity of 710 pm/°C. • The fabrication process employed is fully compatible with CMOS technology. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
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Abstract:This study presents the design, fabrication, and characterization of a high-sensitivity optical temperature sensor utilizing cascaded Mach-Zehnder interferometers (MZIs) on a silicon nitride on an insulator platform. Silicon nitride is an optimal material for waveguides due to its compatibility with complementary metal-oxide semiconductor (CMOS) technology, low optical losses, and extensive operational spectral range, despite its relatively low thermal-optic coefficient (TOC). The sensor comprises two MZI structures with similar free spectral ranges (FSRs), but differing sensitivities achieved through tailored geometries. The device exhibits a markedly enhanced temperature sensitivity compared to conventional silicon nitride- and silicon-based sensors. The measurements yielded a temperature sensitivity of 710 p.m./°C, confirming the sensitivity enhancement over traditional MZI configurations. In addition to temperature sensing, the demonstrated cascaded MZI structure is also promising for thermo-optic tuning, optical filtering, and switching applications, especially in systems where silicon nitride is preferred due to its broadband transparency and low loss. The proposed sensor represents a robust solution for precise temperature measurements in industrial, medical, and environmental applications. • This study designs a high-sensitivity optical temperature sensor using cascaded Mach-Zehnder interferometers (MZIs). • The cascaded MZIs were fabricated on a silicon nitride on an insulator platform. • The silicon nitride waveguide platform enables a wide operational spectral range. • The proposed temperature sensor exhibits an enhanced temperature sensitivity of 710 pm/°C. • The fabrication process employed is fully compatible with CMOS technology. [ABSTRACT FROM AUTHOR]
ISSN:09253467
DOI:10.1016/j.optmat.2025.117139