Robust Transition Metal Contacts for Aligned Carbon Nanotubes.
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| Title: | Robust Transition Metal Contacts for Aligned Carbon Nanotubes. |
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| Authors: | Huang, Gang1 (AUTHOR), Wu, Junhong2 (AUTHOR), Li, Haiou1,3 (AUTHOR), Liu, Honggang2,3,4 (AUTHOR) liuhonggang@pku.edu.cn |
| Source: | Nanomaterials (2079-4991). May2025, Vol. 15 Issue 10, p736. 10p. |
| Subjects: | Rapid thermal processing, Transition metal carbides, Schottky barrier, Annealing of metals, Ohmic contacts |
| Abstract: | Aligned carbon nanotubes (A-CNTs) are emerging as one of the most promising materials for next-generation nanoelectronics. However, achieving reliable ohmic contacts between A-CNTs and metals remains a critical challenge. In this study, we employ rapid thermal annealing (RTA) to facilitate the formation of transition metal carbides at the metal–CNT interface, significantly reducing contact resistance and enhancing stability. Using the transmission line method (TLM), we demonstrate that RTA reduces the contact resistance at the Ti/A-CNT interface from 112.26 k Ω · μ m to 1.57 k Ω · μ m and at the Ni/A-CNT interface from 81.72 k Ω · μ m to 1.17 k Ω · μ m, representing a reduction of over an order of magnitude. Moreover, the Schottky barrier heights (SBHs) for both the Ti/A-CNT and Ni/A-CNT interfaces decreases by approximately 50% after annealing. A comparative analysis with Pd/A-CNT contacts shows that Ti and Ni contacts exhibit superior reliability under harsh conditions. This work provides a viable solution for improving the electrical performance and reliability of CNT-based devices, offering a pathway toward the development of future CMOS technologies. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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| Abstract: | Aligned carbon nanotubes (A-CNTs) are emerging as one of the most promising materials for next-generation nanoelectronics. However, achieving reliable ohmic contacts between A-CNTs and metals remains a critical challenge. In this study, we employ rapid thermal annealing (RTA) to facilitate the formation of transition metal carbides at the metal–CNT interface, significantly reducing contact resistance and enhancing stability. Using the transmission line method (TLM), we demonstrate that RTA reduces the contact resistance at the Ti/A-CNT interface from 112.26 k Ω · μ m to 1.57 k Ω · μ m and at the Ni/A-CNT interface from 81.72 k Ω · μ m to 1.17 k Ω · μ m, representing a reduction of over an order of magnitude. Moreover, the Schottky barrier heights (SBHs) for both the Ti/A-CNT and Ni/A-CNT interfaces decreases by approximately 50% after annealing. A comparative analysis with Pd/A-CNT contacts shows that Ti and Ni contacts exhibit superior reliability under harsh conditions. This work provides a viable solution for improving the electrical performance and reliability of CNT-based devices, offering a pathway toward the development of future CMOS technologies. [ABSTRACT FROM AUTHOR] |
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| ISSN: | 20794991 |
| DOI: | 10.3390/nano15100736 |
