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Robust Transition Metal Contacts for Aligned Carbon Nanotubes.

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Title: Robust Transition Metal Contacts for Aligned Carbon Nanotubes.
Authors: Huang, Gang1 (AUTHOR), Wu, Junhong2 (AUTHOR), Li, Haiou1,3 (AUTHOR), Liu, Honggang2,3,4 (AUTHOR) liuhonggang@pku.edu.cn
Source: Nanomaterials (2079-4991). May2025, Vol. 15 Issue 10, p736. 10p.
Subjects: Rapid thermal processing, Transition metal carbides, Schottky barrier, Annealing of metals, Ohmic contacts
Abstract: Aligned carbon nanotubes (A-CNTs) are emerging as one of the most promising materials for next-generation nanoelectronics. However, achieving reliable ohmic contacts between A-CNTs and metals remains a critical challenge. In this study, we employ rapid thermal annealing (RTA) to facilitate the formation of transition metal carbides at the metal–CNT interface, significantly reducing contact resistance and enhancing stability. Using the transmission line method (TLM), we demonstrate that RTA reduces the contact resistance at the Ti/A-CNT interface from 112.26 k Ω · μ m to 1.57 k Ω · μ m and at the Ni/A-CNT interface from 81.72 k Ω · μ m to 1.17 k Ω · μ m, representing a reduction of over an order of magnitude. Moreover, the Schottky barrier heights (SBHs) for both the Ti/A-CNT and Ni/A-CNT interfaces decreases by approximately 50% after annealing. A comparative analysis with Pd/A-CNT contacts shows that Ti and Ni contacts exhibit superior reliability under harsh conditions. This work provides a viable solution for improving the electrical performance and reliability of CNT-based devices, offering a pathway toward the development of future CMOS technologies. [ABSTRACT FROM AUTHOR]
Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Robust Transition Metal Contacts for Aligned Carbon Nanotubes.
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  Data: <searchLink fieldCode="AR" term="%22Huang%2C+Gang%22">Huang, Gang</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Wu%2C+Junhong%22">Wu, Junhong</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Li%2C+Haiou%22">Li, Haiou</searchLink><relatesTo>1,3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Liu%2C+Honggang%22">Liu, Honggang</searchLink><relatesTo>2,3,4</relatesTo> (AUTHOR)<i> liuhonggang@pku.edu.cn</i>
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  Label: Abstract
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  Data: Aligned carbon nanotubes (A-CNTs) are emerging as one of the most promising materials for next-generation nanoelectronics. However, achieving reliable ohmic contacts between A-CNTs and metals remains a critical challenge. In this study, we employ rapid thermal annealing (RTA) to facilitate the formation of transition metal carbides at the metal–CNT interface, significantly reducing contact resistance and enhancing stability. Using the transmission line method (TLM), we demonstrate that RTA reduces the contact resistance at the Ti/A-CNT interface from 112.26 k Ω · μ m to 1.57 k Ω · μ m and at the Ni/A-CNT interface from 81.72 k Ω · μ m to 1.17 k Ω · μ m, representing a reduction of over an order of magnitude. Moreover, the Schottky barrier heights (SBHs) for both the Ti/A-CNT and Ni/A-CNT interfaces decreases by approximately 50% after annealing. A comparative analysis with Pd/A-CNT contacts shows that Ti and Ni contacts exhibit superior reliability under harsh conditions. This work provides a viable solution for improving the electrical performance and reliability of CNT-based devices, offering a pathway toward the development of future CMOS technologies. [ABSTRACT FROM AUTHOR]
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  Label:
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  Data: <i>Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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      – Type: doi
        Value: 10.3390/nano15100736
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        Text: English
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        Type: general
      – SubjectFull: Transition metal carbides
        Type: general
      – SubjectFull: Schottky barrier
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      – SubjectFull: Annealing of metals
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      – SubjectFull: Ohmic contacts
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            NameFull: Li, Haiou
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            – D: 15
              M: 05
              Text: May2025
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              Y: 2025
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