Effect of γ-Irradiation on Low-Temperature Hopping Conductivity in InSe Single Crystals Doped by Er.
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| Title: | Effect of γ-Irradiation on Low-Temperature Hopping Conductivity in InSe Single Crystals Doped by Er. |
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| Authors: | Ismayilov, A. A.1,2 (AUTHOR), Gasanov, N. Z.2 (AUTHOR) nazimgasanov55@gmail.com, Ismayilova, P. H.2 (AUTHOR), Ismayilzada, L. A.3 (AUTHOR) |
| Source: | Semiconductors. Jun2025, Vol. 59 Issue 6, p503-506. 4p. |
| Subjects: | Single crystals, Fermi level, Radiation, Dispersion (Chemistry), Density |
| Abstract: | The effect of γ-irradiation with a dose of Dγ = 100 krad on the parameters of states localized in the forbidden band in n-In0.999Er0.001Se and n-In0.997Er0.003Se single crystals in the temperature range of 100–300 K was studied. It was found that γ-radiation exposure alters the characteristics of states localized near the Fermi level: a decrease in their density and concentration of deep traps responsible for hopping conductivity, an increase in their energy dispersion and average hopping distance. The radiation-induced defect concentrations in the InSe systems were quantitatively determined. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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| Abstract: | The effect of γ-irradiation with a dose of Dγ = 100 krad on the parameters of states localized in the forbidden band in n-In0.999Er0.001Se and n-In0.997Er0.003Se single crystals in the temperature range of 100–300 K was studied. It was found that γ-radiation exposure alters the characteristics of states localized near the Fermi level: a decrease in their density and concentration of deep traps responsible for hopping conductivity, an increase in their energy dispersion and average hopping distance. The radiation-induced defect concentrations in the InSe systems were quantitatively determined. [ABSTRACT FROM AUTHOR] |
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| ISSN: | 10637826 |
| DOI: | 10.1134/S1063782625600500 |
