Effect of γ-Irradiation on Low-Temperature Hopping Conductivity in InSe Single Crystals Doped by Er.
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| Title: | Effect of γ-Irradiation on Low-Temperature Hopping Conductivity in InSe Single Crystals Doped by Er. |
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| Authors: | Ismayilov, A. A.1,2 (AUTHOR), Gasanov, N. Z.2 (AUTHOR) nazimgasanov55@gmail.com, Ismayilova, P. H.2 (AUTHOR), Ismayilzada, L. A.3 (AUTHOR) |
| Source: | Semiconductors. Jun2025, Vol. 59 Issue 6, p503-506. 4p. |
| Subjects: | Single crystals, Fermi level, Radiation, Dispersion (Chemistry), Density |
| Abstract: | The effect of γ-irradiation with a dose of Dγ = 100 krad on the parameters of states localized in the forbidden band in n-In0.999Er0.001Se and n-In0.997Er0.003Se single crystals in the temperature range of 100–300 K was studied. It was found that γ-radiation exposure alters the characteristics of states localized near the Fermi level: a decrease in their density and concentration of deep traps responsible for hopping conductivity, an increase in their energy dispersion and average hopping distance. The radiation-induced defect concentrations in the InSe systems were quantitatively determined. [ABSTRACT FROM AUTHOR] |
| Copyright of Semiconductors is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
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| Header | DbId: egs DbLabel: Engineering Source An: 186016527 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Effect of γ-Irradiation on Low-Temperature Hopping Conductivity in InSe Single Crystals Doped by Er. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Ismayilov%2C+A%2E+A%2E%22">Ismayilov, A. A.</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Gasanov%2C+N%2E+Z%2E%22">Gasanov, N. Z.</searchLink><relatesTo>2</relatesTo> (AUTHOR)<i> nazimgasanov55@gmail.com</i><br /><searchLink fieldCode="AR" term="%22Ismayilova%2C+P%2E+H%2E%22">Ismayilova, P. H.</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Ismayilzada%2C+L%2E+A%2E%22">Ismayilzada, L. A.</searchLink><relatesTo>3</relatesTo> (AUTHOR) – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Semiconductors%22">Semiconductors</searchLink>. Jun2025, Vol. 59 Issue 6, p503-506. 4p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Single+crystals%22">Single crystals</searchLink><br /><searchLink fieldCode="DE" term="%22Fermi+level%22">Fermi level</searchLink><br /><searchLink fieldCode="DE" term="%22Radiation%22">Radiation</searchLink><br /><searchLink fieldCode="DE" term="%22Dispersion+%28Chemistry%29%22">Dispersion (Chemistry)</searchLink><br /><searchLink fieldCode="DE" term="%22Density%22">Density</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: The effect of γ-irradiation with a dose of Dγ = 100 krad on the parameters of states localized in the forbidden band in n-In0.999Er0.001Se and n-In0.997Er0.003Se single crystals in the temperature range of 100–300 K was studied. It was found that γ-radiation exposure alters the characteristics of states localized near the Fermi level: a decrease in their density and concentration of deep traps responsible for hopping conductivity, an increase in their energy dispersion and average hopping distance. The radiation-induced defect concentrations in the InSe systems were quantitatively determined. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Semiconductors is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1134/S1063782625600500 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 4 StartPage: 503 Subjects: – SubjectFull: Single crystals Type: general – SubjectFull: Fermi level Type: general – SubjectFull: Radiation Type: general – SubjectFull: Dispersion (Chemistry) Type: general – SubjectFull: Density Type: general Titles: – TitleFull: Effect of γ-Irradiation on Low-Temperature Hopping Conductivity in InSe Single Crystals Doped by Er. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Ismayilov, A. A. – PersonEntity: Name: NameFull: Gasanov, N. Z. – PersonEntity: Name: NameFull: Ismayilova, P. H. – PersonEntity: Name: NameFull: Ismayilzada, L. A. IsPartOfRelationships: – BibEntity: Dates: – D: 15 M: 06 Text: Jun2025 Type: published Y: 2025 Identifiers: – Type: issn-print Value: 10637826 Numbering: – Type: volume Value: 59 – Type: issue Value: 6 Titles: – TitleFull: Semiconductors Type: main |
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