Effect of the Ultra-thin GaN Interlayer on the Mechanisms of Conduction in Au/GaAs Schottky Barrier Diodes.
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| Title: | Effect of the Ultra-thin GaN Interlayer on the Mechanisms of Conduction in Au/GaAs Schottky Barrier Diodes. |
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| Authors: | Khales, Hammouche1 (AUTHOR), Kacha, Arslane Hatem1 (AUTHOR) arslane_k@hotmail.com, Akkal, Boudali1 (AUTHOR), Benamara, Zineb1 (AUTHOR) |
| Source: | Semiconductors. Jun2025, Vol. 59 Issue 6, p551-560. 10p. |
| Subjects: | Schottky barrier diodes, Semiconductor junctions, Stray currents, Gallium nitride, Substrates (Materials science) |
| Abstract: | This study investigates the impact of incorporating an ultra-thin GaN interlayer on the electrical properties and conduction mechanisms of Au/GaAs Schottky barrier diodes (SBDs). The GaN interlayer, formed by surface nitridation of the n-GaAs substrate, significantly enhances the metal/semiconductor interface, leading to enhanced electrical parameters. Experimental methods involved fabricating Au/GaAs and Au/GaN/GaAs diodes and characterizing their current–voltage characteristics at room temperature. Theoretical models, including thermionic, tunnel, generation-recombination, and leakage currents, were applied to simulate the current–voltage characteristics. Results demonstrate that the introduction of the GaN interlayer reduces the ideality factor from 3.28 to 1.76 and increases the barrier height from 0.54 to 0.71 eV. Simulations corroborate experimental findings, revealing that the dominant conduction mechanism in Au/GaAs diodes without passivation involves significant leakage and tunnel currents, whereas the GaN interlayer promotes thermionic conduction. This study provides valuable insights into optimizing Schottky barrier diodes for high-performance applications in high-temperature and high-frequency environments. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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| Abstract: | This study investigates the impact of incorporating an ultra-thin GaN interlayer on the electrical properties and conduction mechanisms of Au/GaAs Schottky barrier diodes (SBDs). The GaN interlayer, formed by surface nitridation of the n-GaAs substrate, significantly enhances the metal/semiconductor interface, leading to enhanced electrical parameters. Experimental methods involved fabricating Au/GaAs and Au/GaN/GaAs diodes and characterizing their current–voltage characteristics at room temperature. Theoretical models, including thermionic, tunnel, generation-recombination, and leakage currents, were applied to simulate the current–voltage characteristics. Results demonstrate that the introduction of the GaN interlayer reduces the ideality factor from 3.28 to 1.76 and increases the barrier height from 0.54 to 0.71 eV. Simulations corroborate experimental findings, revealing that the dominant conduction mechanism in Au/GaAs diodes without passivation involves significant leakage and tunnel currents, whereas the GaN interlayer promotes thermionic conduction. This study provides valuable insights into optimizing Schottky barrier diodes for high-performance applications in high-temperature and high-frequency environments. [ABSTRACT FROM AUTHOR] |
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| ISSN: | 10637826 |
| DOI: | 10.1134/S1063782624602589 |
