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Effect of the Ultra-thin GaN Interlayer on the Mechanisms of Conduction in Au/GaAs Schottky Barrier Diodes.

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Title: Effect of the Ultra-thin GaN Interlayer on the Mechanisms of Conduction in Au/GaAs Schottky Barrier Diodes.
Authors: Khales, Hammouche1 (AUTHOR), Kacha, Arslane Hatem1 (AUTHOR) arslane_k@hotmail.com, Akkal, Boudali1 (AUTHOR), Benamara, Zineb1 (AUTHOR)
Source: Semiconductors. Jun2025, Vol. 59 Issue 6, p551-560. 10p.
Subjects: Schottky barrier diodes, Semiconductor junctions, Stray currents, Gallium nitride, Substrates (Materials science)
Abstract: This study investigates the impact of incorporating an ultra-thin GaN interlayer on the electrical properties and conduction mechanisms of Au/GaAs Schottky barrier diodes (SBDs). The GaN interlayer, formed by surface nitridation of the n-GaAs substrate, significantly enhances the metal/semiconductor interface, leading to enhanced electrical parameters. Experimental methods involved fabricating Au/GaAs and Au/GaN/GaAs diodes and characterizing their current–voltage characteristics at room temperature. Theoretical models, including thermionic, tunnel, generation-recombination, and leakage currents, were applied to simulate the current–voltage characteristics. Results demonstrate that the introduction of the GaN interlayer reduces the ideality factor from 3.28 to 1.76 and increases the barrier height from 0.54 to 0.71 eV. Simulations corroborate experimental findings, revealing that the dominant conduction mechanism in Au/GaAs diodes without passivation involves significant leakage and tunnel currents, whereas the GaN interlayer promotes thermionic conduction. This study provides valuable insights into optimizing Schottky barrier diodes for high-performance applications in high-temperature and high-frequency environments. [ABSTRACT FROM AUTHOR]
Copyright of Semiconductors is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Effect of the Ultra-thin GaN Interlayer on the Mechanisms of Conduction in Au/GaAs Schottky Barrier Diodes.
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  Data: <searchLink fieldCode="JN" term="%22Semiconductors%22">Semiconductors</searchLink>. Jun2025, Vol. 59 Issue 6, p551-560. 10p.
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  Data: <searchLink fieldCode="DE" term="%22Schottky+barrier+diodes%22">Schottky barrier diodes</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+junctions%22">Semiconductor junctions</searchLink><br /><searchLink fieldCode="DE" term="%22Stray+currents%22">Stray currents</searchLink><br /><searchLink fieldCode="DE" term="%22Gallium+nitride%22">Gallium nitride</searchLink><br /><searchLink fieldCode="DE" term="%22Substrates+%28Materials+science%29%22">Substrates (Materials science)</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: This study investigates the impact of incorporating an ultra-thin GaN interlayer on the electrical properties and conduction mechanisms of Au/GaAs Schottky barrier diodes (SBDs). The GaN interlayer, formed by surface nitridation of the n-GaAs substrate, significantly enhances the metal/semiconductor interface, leading to enhanced electrical parameters. Experimental methods involved fabricating Au/GaAs and Au/GaN/GaAs diodes and characterizing their current–voltage characteristics at room temperature. Theoretical models, including thermionic, tunnel, generation-recombination, and leakage currents, were applied to simulate the current–voltage characteristics. Results demonstrate that the introduction of the GaN interlayer reduces the ideality factor from 3.28 to 1.76 and increases the barrier height from 0.54 to 0.71 eV. Simulations corroborate experimental findings, revealing that the dominant conduction mechanism in Au/GaAs diodes without passivation involves significant leakage and tunnel currents, whereas the GaN interlayer promotes thermionic conduction. This study provides valuable insights into optimizing Schottky barrier diodes for high-performance applications in high-temperature and high-frequency environments. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
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  Data: <i>Copyright of Semiconductors is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1134/S1063782624602589
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        Text: English
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        Type: general
      – SubjectFull: Semiconductor junctions
        Type: general
      – SubjectFull: Stray currents
        Type: general
      – SubjectFull: Gallium nitride
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      – SubjectFull: Substrates (Materials science)
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      – TitleFull: Effect of the Ultra-thin GaN Interlayer on the Mechanisms of Conduction in Au/GaAs Schottky Barrier Diodes.
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              Text: Jun2025
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