Demonstration of ferroelectricity in Zn1-xMgxO thin films over a wide Mg concentration range.
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| Title: | Demonstration of ferroelectricity in Zn |
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| Authors: | Zhao, Wenjin1 (AUTHOR), Zhou, Dayu1 (AUTHOR) zhoudayu@dlut.edu.cn, Sui, Jinyang1 (AUTHOR), Tong, Yi2 (AUTHOR), Wang, Xinpeng2 (AUTHOR), Zhu, Longxiao1 (AUTHOR) |
| Source: | Journal of Materials Science: Materials in Electronics. Jun2025, Vol. 36 Issue 18, p1-9. 9p. |
| Abstract: | Zn1-xMgxO thin films with a Mg content ranging from 35 to 53 at% were prepared by dual-target reactive magnetron co-sputtering at room temperature. X-ray diffractions show highly (0002)-preferred orientation growth of the wurtzite-structured films and the appearance of the rock-salt phase in films with the Mg concentration higher than 43 at%. The polarization and transient current hysteresis curve measurements confirm that the ferroelectricity can be achieved not only in single wurtzite-structured films, but also surprisingly in films co-existing with wurtzite and rock-salt phases. The results contribute significant progress in understanding and further optimizing the ferroelectric property of wurtzite-structured materials, while achieving a broader ferroelectric composition range is also more advantageous for device applications. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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| Abstract: | Zn1-xMgxO thin films with a Mg content ranging from 35 to 53 at% were prepared by dual-target reactive magnetron co-sputtering at room temperature. X-ray diffractions show highly (0002)-preferred orientation growth of the wurtzite-structured films and the appearance of the rock-salt phase in films with the Mg concentration higher than 43 at%. The polarization and transient current hysteresis curve measurements confirm that the ferroelectricity can be achieved not only in single wurtzite-structured films, but also surprisingly in films co-existing with wurtzite and rock-salt phases. The results contribute significant progress in understanding and further optimizing the ferroelectric property of wurtzite-structured materials, while achieving a broader ferroelectric composition range is also more advantageous for device applications. [ABSTRACT FROM AUTHOR] |
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| ISSN: | 09574522 |
| DOI: | 10.1007/s10854-025-15197-w |
