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Demonstration of ferroelectricity in Zn1-xMgxO thin films over a wide Mg concentration range.

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Title: Demonstration of ferroelectricity in Zn1-xMgxO thin films over a wide Mg concentration range.
Authors: Zhao, Wenjin1 (AUTHOR), Zhou, Dayu1 (AUTHOR) zhoudayu@dlut.edu.cn, Sui, Jinyang1 (AUTHOR), Tong, Yi2 (AUTHOR), Wang, Xinpeng2 (AUTHOR), Zhu, Longxiao1 (AUTHOR)
Source: Journal of Materials Science: Materials in Electronics. Jun2025, Vol. 36 Issue 18, p1-9. 9p.
Abstract: Zn1-xMgxO thin films with a Mg content ranging from 35 to 53 at% were prepared by dual-target reactive magnetron co-sputtering at room temperature. X-ray diffractions show highly (0002)-preferred orientation growth of the wurtzite-structured films and the appearance of the rock-salt phase in films with the Mg concentration higher than 43 at%. The polarization and transient current hysteresis curve measurements confirm that the ferroelectricity can be achieved not only in single wurtzite-structured films, but also surprisingly in films co-existing with wurtzite and rock-salt phases. The results contribute significant progress in understanding and further optimizing the ferroelectric property of wurtzite-structured materials, while achieving a broader ferroelectric composition range is also more advantageous for device applications. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>. Jun2025, Vol. 36 Issue 18, p1-9. 9p.
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Zn1-xMgxO thin films with a Mg content ranging from 35 to 53 at% were prepared by dual-target reactive magnetron co-sputtering at room temperature. X-ray diffractions show highly (0002)-preferred orientation growth of the wurtzite-structured films and the appearance of the rock-salt phase in films with the Mg concentration higher than 43 at%. The polarization and transient current hysteresis curve measurements confirm that the ferroelectricity can be achieved not only in single wurtzite-structured films, but also surprisingly in films co-existing with wurtzite and rock-salt phases. The results contribute significant progress in understanding and further optimizing the ferroelectric property of wurtzite-structured materials, while achieving a broader ferroelectric composition range is also more advantageous for device applications. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1007/s10854-025-15197-w
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      – Code: eng
        Text: English
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      – TitleFull: Demonstration of ferroelectricity in Zn1-xMgxO thin films over a wide Mg concentration range.
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            NameFull: Zhao, Wenjin
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            NameFull: Zhou, Dayu
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            – D: 21
              M: 06
              Text: Jun2025
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              Y: 2025
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