Metasurface-Enhanced Infrared Photodetection Using Layered van der Waals MoSe 2.
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| Title: | Metasurface-Enhanced Infrared Photodetection Using Layered van der Waals MoSe 2. |
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| Authors: | Li, Jinchun1,2 (AUTHOR), Xie, Zhixiang2 (AUTHOR), Zhao, Tianxiang1,2 (AUTHOR), Li, Hongliang2 (AUTHOR), Wu, Di1 (AUTHOR) wudi1205@zzu.edu.cn, Yu, Xuechao2 (AUTHOR) xcyu2022@sinano.ac.cn |
| Source: | Nanomaterials (2079-4991). Jun2025, Vol. 15 Issue 12, p913. 11p. |
| Subjects: | Optical elements, Optoelectronic devices, Surface plasmon resonance, Semiconductor devices, Structural engineering |
| Abstract: | Transition metal dichalcogenide (TMD) materials have demonstrated promising potential for applications in photodetection due to their tunable bandgaps, high carrier mobility, and strong light absorption capabilities. However, limited by their intrinsic bandgaps, TMDs are unable to efficiently absorb photons with energies below the bandgap, resulting in a significant attenuation of photoresponse in spectral regions beyond the bandgap. This inherently restricts their broadband photodetection performance. By introducing metasurface structures consisting of subwavelength optical elements, localized plasmon resonance effects can be exploited to overcome this absorption limitation, significantly enhancing the light absorption of TMD films. Additionally, the heterogeneous integration process between the metasurface and two-dimensional materials offers low-temperature compatibility advantages, effectively avoiding the limitations imposed by high-temperature doping processes in traditional semiconductor devices. Here, we systematically investigate metasurface-enhanced two-dimensional MoSe2 photodetectors, demonstrating broadband responsivity extension into the mid-infrared spectrum via precise control of metasurface structural dimensions. The optimized device possesses a wide spectrum response ranging from 808 nm to 10 μm, and the responsivity (R) and specific detection rate (D*) under 4 μm illumination achieve 7.1 mA/W and 1.12 × 108 Jones, respectively. Distinct metasurface configurations exhibit varying impacts on optical absorption characteristics and detection spectral ranges, providing experimental foundations for optimizing high-performance photodetectors. This work establishes a practical pathway for developing broadband optoelectronic devices through nanophotonic structure engineering. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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| Abstract: | Transition metal dichalcogenide (TMD) materials have demonstrated promising potential for applications in photodetection due to their tunable bandgaps, high carrier mobility, and strong light absorption capabilities. However, limited by their intrinsic bandgaps, TMDs are unable to efficiently absorb photons with energies below the bandgap, resulting in a significant attenuation of photoresponse in spectral regions beyond the bandgap. This inherently restricts their broadband photodetection performance. By introducing metasurface structures consisting of subwavelength optical elements, localized plasmon resonance effects can be exploited to overcome this absorption limitation, significantly enhancing the light absorption of TMD films. Additionally, the heterogeneous integration process between the metasurface and two-dimensional materials offers low-temperature compatibility advantages, effectively avoiding the limitations imposed by high-temperature doping processes in traditional semiconductor devices. Here, we systematically investigate metasurface-enhanced two-dimensional MoSe2 photodetectors, demonstrating broadband responsivity extension into the mid-infrared spectrum via precise control of metasurface structural dimensions. The optimized device possesses a wide spectrum response ranging from 808 nm to 10 μm, and the responsivity (R) and specific detection rate (D*) under 4 μm illumination achieve 7.1 mA/W and 1.12 × 108 Jones, respectively. Distinct metasurface configurations exhibit varying impacts on optical absorption characteristics and detection spectral ranges, providing experimental foundations for optimizing high-performance photodetectors. This work establishes a practical pathway for developing broadband optoelectronic devices through nanophotonic structure engineering. [ABSTRACT FROM AUTHOR] |
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| ISSN: | 20794991 |
| DOI: | 10.3390/nano15120913 |
