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High surface quality Y2SiO5 silicate-crystal waveguides etched by chlorine-based inductive coupled plasma reactive ion etching.

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Title: High surface quality Y2SiO5 silicate-crystal waveguides etched by chlorine-based inductive coupled plasma reactive ion etching.
Authors: Talneau, A.1 (AUTHOR) anne.talneau@c2n.upsaclay.fr, Chan, M.2 (AUTHOR), Laourine, F.1 (AUTHOR), Maillard, F.1 (AUTHOR), Welinski, S.2 (AUTHOR), Berger, P.2 (AUTHOR), Ferrier, A.3,4 (AUTHOR)
Source: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films. Jul2025, Vol. 43 Issue 4, p1-8. 8p.
Subjects: Optical waveguides, Plasma etching, Quantum optics, Silicate minerals, Etching reagents, Surface texture
Abstract: Among rare-earth ion-doped crystals that are of high interest for quantum technologies, yttrium orthosilicate [Y2SiO5 (YSO)] crystal has demonstrated the longest coherence times. Etching optical guiding structures enables the creation of complex structures offering the advantage of technological scalability. We report on the dry etching of YSO crystal wafers performed by inductive coupled plasma (ICP) reactive ion etching. The material etching rate, the etch rate selectivity versus the material mask, and the etched side wall's shape have been measured for various ICP process parameters and gas combinations including Ar-alone, Cl2:Ar, and Cl2:N2 plasma chemistry. These gas-combination choices have enabled identifying the etching mechanisms involved. Etching results have evidenced that Ar ions are the primary contributors for YSO etching, with Cl ions being also efficient, while Cl neutrals play a marginal role. ICP YSO etching is predominantly a physical process carried out by ions. Several ICP powers and RF powers have been investigated. The highest 80 nm/min etch rate is obtained under the Ar-alone plasma, but at the expense of trenching, while chlorine-based etching provides no trenching and smooth side walls. The choice of the dielectric material mask is also discussed. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
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Abstract:Among rare-earth ion-doped crystals that are of high interest for quantum technologies, yttrium orthosilicate [Y2SiO5 (YSO)] crystal has demonstrated the longest coherence times. Etching optical guiding structures enables the creation of complex structures offering the advantage of technological scalability. We report on the dry etching of YSO crystal wafers performed by inductive coupled plasma (ICP) reactive ion etching. The material etching rate, the etch rate selectivity versus the material mask, and the etched side wall's shape have been measured for various ICP process parameters and gas combinations including Ar-alone, Cl2:Ar, and Cl2:N2 plasma chemistry. These gas-combination choices have enabled identifying the etching mechanisms involved. Etching results have evidenced that Ar ions are the primary contributors for YSO etching, with Cl ions being also efficient, while Cl neutrals play a marginal role. ICP YSO etching is predominantly a physical process carried out by ions. Several ICP powers and RF powers have been investigated. The highest 80 nm/min etch rate is obtained under the Ar-alone plasma, but at the expense of trenching, while chlorine-based etching provides no trenching and smooth side walls. The choice of the dielectric material mask is also discussed. [ABSTRACT FROM AUTHOR]
ISSN:07342101
DOI:10.1116/6.0004314