View in EDS

High surface quality Y2SiO5 silicate-crystal waveguides etched by chlorine-based inductive coupled plasma reactive ion etching.

Saved in:
Bibliographic Details
Title: High surface quality Y2SiO5 silicate-crystal waveguides etched by chlorine-based inductive coupled plasma reactive ion etching.
Authors: Talneau, A.1 (AUTHOR) anne.talneau@c2n.upsaclay.fr, Chan, M.2 (AUTHOR), Laourine, F.1 (AUTHOR), Maillard, F.1 (AUTHOR), Welinski, S.2 (AUTHOR), Berger, P.2 (AUTHOR), Ferrier, A.3,4 (AUTHOR)
Source: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films. Jul2025, Vol. 43 Issue 4, p1-8. 8p.
Subjects: Optical waveguides, Plasma etching, Quantum optics, Silicate minerals, Etching reagents, Surface texture
Abstract: Among rare-earth ion-doped crystals that are of high interest for quantum technologies, yttrium orthosilicate [Y2SiO5 (YSO)] crystal has demonstrated the longest coherence times. Etching optical guiding structures enables the creation of complex structures offering the advantage of technological scalability. We report on the dry etching of YSO crystal wafers performed by inductive coupled plasma (ICP) reactive ion etching. The material etching rate, the etch rate selectivity versus the material mask, and the etched side wall's shape have been measured for various ICP process parameters and gas combinations including Ar-alone, Cl2:Ar, and Cl2:N2 plasma chemistry. These gas-combination choices have enabled identifying the etching mechanisms involved. Etching results have evidenced that Ar ions are the primary contributors for YSO etching, with Cl ions being also efficient, while Cl neutrals play a marginal role. ICP YSO etching is predominantly a physical process carried out by ions. Several ICP powers and RF powers have been investigated. The highest 80 nm/min etch rate is obtained under the Ar-alone plasma, but at the expense of trenching, while chlorine-based etching provides no trenching and smooth side walls. The choice of the dielectric material mask is also discussed. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
FullText Text:
  Availability: 0
Header DbId: egs
DbLabel: Engineering Source
An: 186471913
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: High surface quality Y<subscript>2</subscript>SiO<subscript>5</subscript> silicate-crystal waveguides etched by chlorine-based inductive coupled plasma reactive ion etching.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Talneau%2C+A%2E%22">Talneau, A.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> anne.talneau@c2n.upsaclay.fr</i><br /><searchLink fieldCode="AR" term="%22Chan%2C+M%2E%22">Chan, M.</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Laourine%2C+F%2E%22">Laourine, F.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Maillard%2C+F%2E%22">Maillard, F.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Welinski%2C+S%2E%22">Welinski, S.</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Berger%2C+P%2E%22">Berger, P.</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Ferrier%2C+A%2E%22">Ferrier, A.</searchLink><relatesTo>3,4</relatesTo> (AUTHOR)
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Journal+of+Vacuum+Science+%26+Technology%3A+Part+A-Vacuums%2C+Surfaces+%26+Films%22">Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films</searchLink>. Jul2025, Vol. 43 Issue 4, p1-8. 8p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Optical+waveguides%22">Optical waveguides</searchLink><br /><searchLink fieldCode="DE" term="%22Plasma+etching%22">Plasma etching</searchLink><br /><searchLink fieldCode="DE" term="%22Quantum+optics%22">Quantum optics</searchLink><br /><searchLink fieldCode="DE" term="%22Silicate+minerals%22">Silicate minerals</searchLink><br /><searchLink fieldCode="DE" term="%22Etching+reagents%22">Etching reagents</searchLink><br /><searchLink fieldCode="DE" term="%22Surface+texture%22">Surface texture</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Among rare-earth ion-doped crystals that are of high interest for quantum technologies, yttrium orthosilicate [Y2SiO5 (YSO)] crystal has demonstrated the longest coherence times. Etching optical guiding structures enables the creation of complex structures offering the advantage of technological scalability. We report on the dry etching of YSO crystal wafers performed by inductive coupled plasma (ICP) reactive ion etching. The material etching rate, the etch rate selectivity versus the material mask, and the etched side wall's shape have been measured for various ICP process parameters and gas combinations including Ar-alone, Cl2:Ar, and Cl2:N2 plasma chemistry. These gas-combination choices have enabled identifying the etching mechanisms involved. Etching results have evidenced that Ar ions are the primary contributors for YSO etching, with Cl ions being also efficient, while Cl neutrals play a marginal role. ICP YSO etching is predominantly a physical process carried out by ions. Several ICP powers and RF powers have been investigated. The highest 80 nm/min etch rate is obtained under the Ar-alone plasma, but at the expense of trenching, while chlorine-based etching provides no trenching and smooth side walls. The choice of the dielectric material mask is also discussed. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=186471913
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1116/6.0004314
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 8
        StartPage: 1
    Subjects:
      – SubjectFull: Optical waveguides
        Type: general
      – SubjectFull: Plasma etching
        Type: general
      – SubjectFull: Quantum optics
        Type: general
      – SubjectFull: Silicate minerals
        Type: general
      – SubjectFull: Etching reagents
        Type: general
      – SubjectFull: Surface texture
        Type: general
    Titles:
      – TitleFull: High surface quality Y2SiO5 silicate-crystal waveguides etched by chlorine-based inductive coupled plasma reactive ion etching.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Talneau, A.
      – PersonEntity:
          Name:
            NameFull: Chan, M.
      – PersonEntity:
          Name:
            NameFull: Laourine, F.
      – PersonEntity:
          Name:
            NameFull: Maillard, F.
      – PersonEntity:
          Name:
            NameFull: Welinski, S.
      – PersonEntity:
          Name:
            NameFull: Berger, P.
      – PersonEntity:
          Name:
            NameFull: Ferrier, A.
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 07
              Text: Jul2025
              Type: published
              Y: 2025
          Identifiers:
            – Type: issn-print
              Value: 07342101
          Numbering:
            – Type: volume
              Value: 43
            – Type: issue
              Value: 4
          Titles:
            – TitleFull: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films
              Type: main
ResultId 1