5009‐ppi, 10000‐cd/m2, OLED/OS/Si structure display with built‐in CPU and display driver.
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| Title: | 5009‐ppi, 10000‐cd/m2, OLED/OS/Si structure display with built‐in CPU and display driver. |
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| Authors: | Tamatsukuri, Yuki1 (AUTHOR) yt1198@sel.co.jp, Miyairi, Akitsugu1 (AUTHOR), Miyata, Shoki1 (AUTHOR), Ito, Minato1 (AUTHOR), Saito, Toshihiko1 (AUTHOR), Fujita, Masashi1 (AUTHOR), Kozuma, Munehiro1 (AUTHOR), Kobayashi, Hidetomo1 (AUTHOR), Yakubo, Yuto1 (AUTHOR), Murakawa, Tsutomu1 (AUTHOR), Yanagisawa, Yuichi1 (AUTHOR), Katayama, Masahiro1 (AUTHOR), Takeuchi, Toshihiko1 (AUTHOR), Okazaki, Yutaka1 (AUTHOR), Yamane, Yasumasa1 (AUTHOR), Nagata, Takaaki1 (AUTHOR), Nakamura, Daiki1 (AUTHOR), Isa, Toshiyuki1 (AUTHOR), Yamazaki, Shunpei1 (AUTHOR) |
| Source: | Journal of the Society for Information Display. May2025, Vol. 33 Issue 5, p314-323. 10p. |
| Subjects: | Central processing units, Semiconductors, Transistors, Diodes, Pixels |
| Abstract: | This study developed an organic light‐emitting diode display featuring c‐axis‐aligned crystalline oxide semiconductor (CAAC‐OS) field‐effect transistors (FETs) monolithically stacked over silicon (Si) FETs. This display achieved a definition of 5,009 ppi and a luminance of 10,000 cd/m2. Below the display pixels incorporating CAAC‐OS FETs, both source and scan drivers and a central processing unit (CPU; Cortex‐M0) were integrated using Si FETs without widening the bezel. The findings indicate that the built‐in CPU enables amplifier offset compensation, which is necessary for image quality correction, and that functional circuits beyond the display driver can operate on a Si substrate. [ABSTRACT FROM AUTHOR] |
| Copyright of Journal of the Society for Information Display is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
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| Abstract: | This study developed an organic light‐emitting diode display featuring c‐axis‐aligned crystalline oxide semiconductor (CAAC‐OS) field‐effect transistors (FETs) monolithically stacked over silicon (Si) FETs. This display achieved a definition of 5,009 ppi and a luminance of 10,000 cd/m2. Below the display pixels incorporating CAAC‐OS FETs, both source and scan drivers and a central processing unit (CPU; Cortex‐M0) were integrated using Si FETs without widening the bezel. The findings indicate that the built‐in CPU enables amplifier offset compensation, which is necessary for image quality correction, and that functional circuits beyond the display driver can operate on a Si substrate. [ABSTRACT FROM AUTHOR] |
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| ISSN: | 10710922 |
| DOI: | 10.1002/jsid.2058 |
