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A laboratory system for X-ray assisted device alteration (XADA).

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Title: A laboratory system for X-ray assisted device alteration (XADA).
Authors: Lau, S.H.1 (AUTHOR) shlau@sigray.com, Lo, W.2 (AUTHOR), Stripe, B.1 (AUTHOR), Su, F.1 (AUTHOR), Lewis, S.1 (AUTHOR), Spink, R.I.1 (AUTHOR), Yun, W.1 (AUTHOR)
Source: Microelectronic Engineering. Nov2025, Vol. 300, pN.PAG-N.PAG. 1p.
Subjects: Galvanic isolation, Failure analysis, Focus (Optics), Integrated circuits, X-rays
Abstract: The shift toward backside power delivery (BPD) architecture and 3D stacking of integrated circuits (ICs) introduces significant challenges for failure analysis (FA). Traditional near-infrared (NIR)-based fault isolation techniques such as Laser-Assisted Device Alteration (LADA) are rendered ineffective by NIR-blocking metallization layers. X-ray-Assisted Device Alteration (XADA) emerges as a powerful alternative, leveraging the penetrating capability of x-rays to target and alter transistor behavior. The ability of x-rays to penetrate near-infrared opaque materials is heavily exploited for non-destructive inspection of packaged parts and circuit boards. For these applications, the ability of the ionizing x-rays to alter transistor characteristics is undesirable. Recently, however, the intentional exploitation of these ionizing effects for targeted device alteration using a micro-focused, scanning x-ray beam, analogous to LADA, has been explored. This paper provides an expanded analysis of XADA, introducing advancements in x-ray source design, focusing optics, and experimental methodologies. Additionally, system-level innovations, including high-precision navigation and co-axial optical setups, position XADA as a transformative tool for FA of BPD-era ICs. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
Description
Abstract:The shift toward backside power delivery (BPD) architecture and 3D stacking of integrated circuits (ICs) introduces significant challenges for failure analysis (FA). Traditional near-infrared (NIR)-based fault isolation techniques such as Laser-Assisted Device Alteration (LADA) are rendered ineffective by NIR-blocking metallization layers. X-ray-Assisted Device Alteration (XADA) emerges as a powerful alternative, leveraging the penetrating capability of x-rays to target and alter transistor behavior. The ability of x-rays to penetrate near-infrared opaque materials is heavily exploited for non-destructive inspection of packaged parts and circuit boards. For these applications, the ability of the ionizing x-rays to alter transistor characteristics is undesirable. Recently, however, the intentional exploitation of these ionizing effects for targeted device alteration using a micro-focused, scanning x-ray beam, analogous to LADA, has been explored. This paper provides an expanded analysis of XADA, introducing advancements in x-ray source design, focusing optics, and experimental methodologies. Additionally, system-level innovations, including high-precision navigation and co-axial optical setups, position XADA as a transformative tool for FA of BPD-era ICs. [ABSTRACT FROM AUTHOR]
ISSN:01679317
DOI:10.1016/j.mee.2025.112375