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A laboratory system for X-ray assisted device alteration (XADA).

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Title: A laboratory system for X-ray assisted device alteration (XADA).
Authors: Lau, S.H.1 (AUTHOR) shlau@sigray.com, Lo, W.2 (AUTHOR), Stripe, B.1 (AUTHOR), Su, F.1 (AUTHOR), Lewis, S.1 (AUTHOR), Spink, R.I.1 (AUTHOR), Yun, W.1 (AUTHOR)
Source: Microelectronic Engineering. Nov2025, Vol. 300, pN.PAG-N.PAG. 1p.
Subjects: Galvanic isolation, Failure analysis, Focus (Optics), Integrated circuits, X-rays
Abstract: The shift toward backside power delivery (BPD) architecture and 3D stacking of integrated circuits (ICs) introduces significant challenges for failure analysis (FA). Traditional near-infrared (NIR)-based fault isolation techniques such as Laser-Assisted Device Alteration (LADA) are rendered ineffective by NIR-blocking metallization layers. X-ray-Assisted Device Alteration (XADA) emerges as a powerful alternative, leveraging the penetrating capability of x-rays to target and alter transistor behavior. The ability of x-rays to penetrate near-infrared opaque materials is heavily exploited for non-destructive inspection of packaged parts and circuit boards. For these applications, the ability of the ionizing x-rays to alter transistor characteristics is undesirable. Recently, however, the intentional exploitation of these ionizing effects for targeted device alteration using a micro-focused, scanning x-ray beam, analogous to LADA, has been explored. This paper provides an expanded analysis of XADA, introducing advancements in x-ray source design, focusing optics, and experimental methodologies. Additionally, system-level innovations, including high-precision navigation and co-axial optical setups, position XADA as a transformative tool for FA of BPD-era ICs. [ABSTRACT FROM AUTHOR]
Copyright of Microelectronic Engineering is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 186993281
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: A laboratory system for X-ray assisted device alteration (XADA).
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  Data: <searchLink fieldCode="AR" term="%22Lau%2C+S%2EH%2E%22">Lau, S.H.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> shlau@sigray.com</i><br /><searchLink fieldCode="AR" term="%22Lo%2C+W%2E%22">Lo, W.</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Stripe%2C+B%2E%22">Stripe, B.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Su%2C+F%2E%22">Su, F.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Lewis%2C+S%2E%22">Lewis, S.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Spink%2C+R%2EI%2E%22">Spink, R.I.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Yun%2C+W%2E%22">Yun, W.</searchLink><relatesTo>1</relatesTo> (AUTHOR)
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  Data: <searchLink fieldCode="JN" term="%22Microelectronic+Engineering%22">Microelectronic Engineering</searchLink>. Nov2025, Vol. 300, pN.PAG-N.PAG. 1p.
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  Data: <searchLink fieldCode="DE" term="%22Galvanic+isolation%22">Galvanic isolation</searchLink><br /><searchLink fieldCode="DE" term="%22Failure+analysis%22">Failure analysis</searchLink><br /><searchLink fieldCode="DE" term="%22Focus+%28Optics%29%22">Focus (Optics)</searchLink><br /><searchLink fieldCode="DE" term="%22Integrated+circuits%22">Integrated circuits</searchLink><br /><searchLink fieldCode="DE" term="%22X-rays%22">X-rays</searchLink>
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  Label: Abstract
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  Data: The shift toward backside power delivery (BPD) architecture and 3D stacking of integrated circuits (ICs) introduces significant challenges for failure analysis (FA). Traditional near-infrared (NIR)-based fault isolation techniques such as Laser-Assisted Device Alteration (LADA) are rendered ineffective by NIR-blocking metallization layers. X-ray-Assisted Device Alteration (XADA) emerges as a powerful alternative, leveraging the penetrating capability of x-rays to target and alter transistor behavior. The ability of x-rays to penetrate near-infrared opaque materials is heavily exploited for non-destructive inspection of packaged parts and circuit boards. For these applications, the ability of the ionizing x-rays to alter transistor characteristics is undesirable. Recently, however, the intentional exploitation of these ionizing effects for targeted device alteration using a micro-focused, scanning x-ray beam, analogous to LADA, has been explored. This paper provides an expanded analysis of XADA, introducing advancements in x-ray source design, focusing optics, and experimental methodologies. Additionally, system-level innovations, including high-precision navigation and co-axial optical setups, position XADA as a transformative tool for FA of BPD-era ICs. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
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  Data: <i>Copyright of Microelectronic Engineering is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1016/j.mee.2025.112375
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      – Code: eng
        Text: English
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      – SubjectFull: Galvanic isolation
        Type: general
      – SubjectFull: Failure analysis
        Type: general
      – SubjectFull: Focus (Optics)
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      – SubjectFull: Integrated circuits
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      – SubjectFull: X-rays
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      – TitleFull: A laboratory system for X-ray assisted device alteration (XADA).
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              Text: Nov2025
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              Y: 2025
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