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Enhanced piezoelectric response in V-doped LiNbO3 films.

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Title: Enhanced piezoelectric response in V-doped LiNbO3 films.
Authors: Zeng, Xiaomei1 (AUTHOR), Xu, Chang2,3 (AUTHOR), Rakhimov, Rakhimbergan4,5 (AUTHOR), Yuldashev, Shavkat6 (AUTHOR), Pohrebniak, Oleksandr7,8 (AUTHOR), Liu, Sheng1,2,3 (AUTHOR) shengliu@whu.edu.cn, Yang, Bing1 (AUTHOR) toyangbing@whu.edu.cn, Pelenovich, Vasiliy O.1,2,3 (AUTHOR) v.pelenovich@whu.edu.cn
Source: Ceramics International. Sep2025:Part A, Vol. 51 Issue 21, p33441-33450. 10p.
Subjects: High-entropy alloys, Radiofrequency sputtering, Ultrasonic transducers, Ultrasonic waves, Piezoelectric materials
Abstract: Most high-temperature ferroelectric materials have relatively low piezoelectric coefficients, which limits their sensor applications. In this study, we propose vanadium (V) doping to improve the ultrasonic performance of LiNbO 3 film transducers deposited by RF magnetron sputtering. In order to achieve doping within a wider range of V concentrations, a small V inlaid target asymmetrically embedded in the main lithium niobate target was used. The V concentration in the deposited films is a decreasing function of the radial distance from the V target, corresponding to the change in film composition from LiNb 0.866 V 0.134 O 3 to LiNb 0.977 V 0.023 O 3. The maximum measured d 33 constant of LiNb 0.935 V 0.065 O 3 film is about three times that of undoped LiNbO 3 film, which are 14 pC/N and 4.8 pC/N, respectively. A comparative study was conducted on the surface morphology, microstructure, phase and element composition, piezoelectric and ferroelectric properties, ultrasonic wave generation efficiency, high-temperature ultrasonic performance, and high-temperature durability of undoped and V-doped LiNbO 3 films with different V concentrations. In order to study high-temperature durability, a protective high entropy alloy oxide layer was added to the transducer structure. The V doping of LiNbO 3 films proposed in this study demonstrates high efficiency, making the doped LiNbO 3 material comparable to widely used but not high-temperature ZnO piezoelectric material. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
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Abstract:Most high-temperature ferroelectric materials have relatively low piezoelectric coefficients, which limits their sensor applications. In this study, we propose vanadium (V) doping to improve the ultrasonic performance of LiNbO 3 film transducers deposited by RF magnetron sputtering. In order to achieve doping within a wider range of V concentrations, a small V inlaid target asymmetrically embedded in the main lithium niobate target was used. The V concentration in the deposited films is a decreasing function of the radial distance from the V target, corresponding to the change in film composition from LiNb 0.866 V 0.134 O 3 to LiNb 0.977 V 0.023 O 3. The maximum measured d 33 constant of LiNb 0.935 V 0.065 O 3 film is about three times that of undoped LiNbO 3 film, which are 14 pC/N and 4.8 pC/N, respectively. A comparative study was conducted on the surface morphology, microstructure, phase and element composition, piezoelectric and ferroelectric properties, ultrasonic wave generation efficiency, high-temperature ultrasonic performance, and high-temperature durability of undoped and V-doped LiNbO 3 films with different V concentrations. In order to study high-temperature durability, a protective high entropy alloy oxide layer was added to the transducer structure. The V doping of LiNbO 3 films proposed in this study demonstrates high efficiency, making the doped LiNbO 3 material comparable to widely used but not high-temperature ZnO piezoelectric material. [ABSTRACT FROM AUTHOR]
ISSN:02728842
DOI:10.1016/j.ceramint.2025.05.076