Enhanced piezoelectric response in V-doped LiNbO3 films.

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Title: Enhanced piezoelectric response in V-doped LiNbO3 films.
Authors: Zeng, Xiaomei1 (AUTHOR), Xu, Chang2,3 (AUTHOR), Rakhimov, Rakhimbergan4,5 (AUTHOR), Yuldashev, Shavkat6 (AUTHOR), Pohrebniak, Oleksandr7,8 (AUTHOR), Liu, Sheng1,2,3 (AUTHOR) shengliu@whu.edu.cn, Yang, Bing1 (AUTHOR) toyangbing@whu.edu.cn, Pelenovich, Vasiliy O.1,2,3 (AUTHOR) v.pelenovich@whu.edu.cn
Source: Ceramics International. Sep2025:Part A, Vol. 51 Issue 21, p33441-33450. 10p.
Subjects: High-entropy alloys, Radiofrequency sputtering, Ultrasonic transducers, Ultrasonic waves, Piezoelectric materials
Abstract: Most high-temperature ferroelectric materials have relatively low piezoelectric coefficients, which limits their sensor applications. In this study, we propose vanadium (V) doping to improve the ultrasonic performance of LiNbO 3 film transducers deposited by RF magnetron sputtering. In order to achieve doping within a wider range of V concentrations, a small V inlaid target asymmetrically embedded in the main lithium niobate target was used. The V concentration in the deposited films is a decreasing function of the radial distance from the V target, corresponding to the change in film composition from LiNb 0.866 V 0.134 O 3 to LiNb 0.977 V 0.023 O 3. The maximum measured d 33 constant of LiNb 0.935 V 0.065 O 3 film is about three times that of undoped LiNbO 3 film, which are 14 pC/N and 4.8 pC/N, respectively. A comparative study was conducted on the surface morphology, microstructure, phase and element composition, piezoelectric and ferroelectric properties, ultrasonic wave generation efficiency, high-temperature ultrasonic performance, and high-temperature durability of undoped and V-doped LiNbO 3 films with different V concentrations. In order to study high-temperature durability, a protective high entropy alloy oxide layer was added to the transducer structure. The V doping of LiNbO 3 films proposed in this study demonstrates high efficiency, making the doped LiNbO 3 material comparable to widely used but not high-temperature ZnO piezoelectric material. [ABSTRACT FROM AUTHOR]
Copyright of Ceramics International is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Enhanced piezoelectric response in V-doped LiNbO3 films.
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  Data: <searchLink fieldCode="AR" term="%22Zeng%2C+Xiaomei%22">Zeng, Xiaomei</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Xu%2C+Chang%22">Xu, Chang</searchLink><relatesTo>2,3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Rakhimov%2C+Rakhimbergan%22">Rakhimov, Rakhimbergan</searchLink><relatesTo>4,5</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Yuldashev%2C+Shavkat%22">Yuldashev, Shavkat</searchLink><relatesTo>6</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Pohrebniak%2C+Oleksandr%22">Pohrebniak, Oleksandr</searchLink><relatesTo>7,8</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Liu%2C+Sheng%22">Liu, Sheng</searchLink><relatesTo>1,2,3</relatesTo> (AUTHOR)<i> shengliu@whu.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Yang%2C+Bing%22">Yang, Bing</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> toyangbing@whu.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Pelenovich%2C+Vasiliy+O%2E%22">Pelenovich, Vasiliy O.</searchLink><relatesTo>1,2,3</relatesTo> (AUTHOR)<i> v.pelenovich@whu.edu.cn</i>
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  Data: <searchLink fieldCode="JN" term="%22Ceramics+International%22">Ceramics International</searchLink>. Sep2025:Part A, Vol. 51 Issue 21, p33441-33450. 10p.
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  Data: <searchLink fieldCode="DE" term="%22High-entropy+alloys%22">High-entropy alloys</searchLink><br /><searchLink fieldCode="DE" term="%22Radiofrequency+sputtering%22">Radiofrequency sputtering</searchLink><br /><searchLink fieldCode="DE" term="%22Ultrasonic+transducers%22">Ultrasonic transducers</searchLink><br /><searchLink fieldCode="DE" term="%22Ultrasonic+waves%22">Ultrasonic waves</searchLink><br /><searchLink fieldCode="DE" term="%22Piezoelectric+materials%22">Piezoelectric materials</searchLink>
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  Label: Abstract
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  Data: Most high-temperature ferroelectric materials have relatively low piezoelectric coefficients, which limits their sensor applications. In this study, we propose vanadium (V) doping to improve the ultrasonic performance of LiNbO 3 film transducers deposited by RF magnetron sputtering. In order to achieve doping within a wider range of V concentrations, a small V inlaid target asymmetrically embedded in the main lithium niobate target was used. The V concentration in the deposited films is a decreasing function of the radial distance from the V target, corresponding to the change in film composition from LiNb 0.866 V 0.134 O 3 to LiNb 0.977 V 0.023 O 3. The maximum measured d 33 constant of LiNb 0.935 V 0.065 O 3 film is about three times that of undoped LiNbO 3 film, which are 14 pC/N and 4.8 pC/N, respectively. A comparative study was conducted on the surface morphology, microstructure, phase and element composition, piezoelectric and ferroelectric properties, ultrasonic wave generation efficiency, high-temperature ultrasonic performance, and high-temperature durability of undoped and V-doped LiNbO 3 films with different V concentrations. In order to study high-temperature durability, a protective high entropy alloy oxide layer was added to the transducer structure. The V doping of LiNbO 3 films proposed in this study demonstrates high efficiency, making the doped LiNbO 3 material comparable to widely used but not high-temperature ZnO piezoelectric material. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Ceramics International is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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      – Type: doi
        Value: 10.1016/j.ceramint.2025.05.076
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      – Code: eng
        Text: English
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        PageCount: 10
        StartPage: 33441
    Subjects:
      – SubjectFull: High-entropy alloys
        Type: general
      – SubjectFull: Radiofrequency sputtering
        Type: general
      – SubjectFull: Ultrasonic transducers
        Type: general
      – SubjectFull: Ultrasonic waves
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      – SubjectFull: Piezoelectric materials
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      – TitleFull: Enhanced piezoelectric response in V-doped LiNbO3 films.
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            NameFull: Zeng, Xiaomei
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            – D: 01
              M: 09
              Text: Sep2025:Part A
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              Y: 2025
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