Fabrication of High-Quality MoS 2 /Graphene Lateral Heterostructure Memristors.
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| Title: | Fabrication of High-Quality MoS 2 /Graphene Lateral Heterostructure Memristors. |
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| Authors: | Mihai, Claudia1 (AUTHOR), Simandan, Iosif-Daniel1 (AUTHOR), Sava, Florinel1 (AUTHOR), Tite, Teddy1 (AUTHOR), Bocirnea, Amelia1 (AUTHOR), Vaduva, Mirela1 (AUTHOR), Zaki, Mohamed Yassine1 (AUTHOR), Baibarac, Mihaela1 (AUTHOR), Velea, Alin (AUTHOR) alin.velea@infim.ro |
| Source: | Nanomaterials (2079-4991). Aug2025, Vol. 15 Issue 16, p1239. 16p. |
| Subjects: | Molybdenum disulfide, Graphene, Sputtering (Physics), Heterostructures, Sulfuration, Memristors, Complementary metal oxide semiconductors |
| Abstract: | Integrating two-dimensional transition-metal dichalcogenides with graphene is attractive for low-power memory and neuromorphic hardware, yet sequential wet transfer leaves polymer residues and high contact resistance. We demonstrate a complementary metal–oxide–semiconductor (CMOS)-compatible, transfer-free route in which an atomically thin amorphous MoS2 precursor is RF-sputtered directly onto chemical vapor-deposited few-layer graphene and crystallized by confined-space sulfurization at 800 °C. Grazing-incidence X-ray reflectivity, Raman spectroscopy, and X-ray photoelectron spectroscopy confirm the formation of residue-free, three-to-four-layer 2H-MoS2 (roughness: 0.8–0.9 nm) over 1.5 cm × 2 cm coupons. Lateral MoS2/graphene devices exhibit reproducible non-volatile resistive switching with a set transition (SET) near +6 V and an analogue ON/OFF ≈2.1, attributable to vacancy-induced Schottky-barrier modulation. The single-furnace magnetron sputtering + sulfurization sequence avoids toxic H2S, polymer transfer steps, and high-resistance contacts, offering a cost-effective pathway toward wafer-scale 2D memristors compatible with back-end CMOS temperatures. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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| Abstract: | Integrating two-dimensional transition-metal dichalcogenides with graphene is attractive for low-power memory and neuromorphic hardware, yet sequential wet transfer leaves polymer residues and high contact resistance. We demonstrate a complementary metal–oxide–semiconductor (CMOS)-compatible, transfer-free route in which an atomically thin amorphous MoS2 precursor is RF-sputtered directly onto chemical vapor-deposited few-layer graphene and crystallized by confined-space sulfurization at 800 °C. Grazing-incidence X-ray reflectivity, Raman spectroscopy, and X-ray photoelectron spectroscopy confirm the formation of residue-free, three-to-four-layer 2H-MoS2 (roughness: 0.8–0.9 nm) over 1.5 cm × 2 cm coupons. Lateral MoS2/graphene devices exhibit reproducible non-volatile resistive switching with a set transition (SET) near +6 V and an analogue ON/OFF ≈2.1, attributable to vacancy-induced Schottky-barrier modulation. The single-furnace magnetron sputtering + sulfurization sequence avoids toxic H2S, polymer transfer steps, and high-resistance contacts, offering a cost-effective pathway toward wafer-scale 2D memristors compatible with back-end CMOS temperatures. [ABSTRACT FROM AUTHOR] |
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| ISSN: | 20794991 |
| DOI: | 10.3390/nano15161239 |
