The Development of Hexagonal Boron Nitride Crystal Growth Technologies and Their Applications in Neutron Detection.
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| Title: | The Development of Hexagonal Boron Nitride Crystal Growth Technologies and Their Applications in Neutron Detection. |
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| Authors: | Song, Wendong1 (AUTHOR), Liu, Dan2 (AUTHOR), Wang, Fenglong3 (AUTHOR) wangfenglong@chd.edu.cn, Zhang, Lu4 (AUTHOR) zhanglu17@xidian.edu.cn |
| Source: | Nanomaterials (2079-4991). Aug2025, Vol. 15 Issue 16, p1256. 24p. |
| Subjects: | Boron nitride, Neutron counters, Crystal growth, Crystallization, Wide gap semiconductors, Chemical vapor deposition, Thermal stability |
| Abstract: | Hexagonal boron nitride (h-BN), a wide-bandgap semiconductor with excellent thermal stability, high electrical resistivity, and strong neutron absorption capacity, has attracted growing interest in the field of solid-state neutron detection. This review summarizes the progress in h-BN crystal growth technologies, including HPHT, CVD, and flux methods, highlighting their advantages and limitations. Among them, flux growth stands out for its simplicity and scalability in producing high-quality, large-area single crystals. The application potential of h-BN in next-generation neutron detectors is also discussed, along with key challenges such as 10B enrichment, crystal quality, and device integration. [ABSTRACT FROM AUTHOR] |
| Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
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| Abstract: | Hexagonal boron nitride (h-BN), a wide-bandgap semiconductor with excellent thermal stability, high electrical resistivity, and strong neutron absorption capacity, has attracted growing interest in the field of solid-state neutron detection. This review summarizes the progress in h-BN crystal growth technologies, including HPHT, CVD, and flux methods, highlighting their advantages and limitations. Among them, flux growth stands out for its simplicity and scalability in producing high-quality, large-area single crystals. The application potential of h-BN in next-generation neutron detectors is also discussed, along with key challenges such as 10B enrichment, crystal quality, and device integration. [ABSTRACT FROM AUTHOR] |
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| ISSN: | 20794991 |
| DOI: | 10.3390/nano15161256 |
