Enhancement of Cu-Cu Bonding Interfaces Through High Creep Rate in Nanocrystalline Cu.
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| Title: | Enhancement of Cu-Cu Bonding Interfaces Through High Creep Rate in Nanocrystalline Cu. |
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| Authors: | Huang, Jian-Yuan1 (AUTHOR), Tran, Dinh-Phuc2 (AUTHOR), Lee, Kang-Ping2,3 (AUTHOR), Lin, Yi-Quan1,2 (AUTHOR), Kuo, Emile2,3 (AUTHOR), Chen, Tsung-Chuan3 (AUTHOR), Chen, Yao-Tsung3 (AUTHOR), Chung, Stream3 (AUTHOR), Chen, Chih1,2 (AUTHOR) chihchen@nycu.edu.tw |
| Source: | Materials (1996-1944). Aug2025, Vol. 18 Issue 16, p3725. 14p. |
| Subjects: | Crystal grain boundaries, Microelectronic packaging, Kirkendall effect, Heat capacity, Metallic bonds |
| Abstract: | This study investigates the use of nanocrystalline Cu (NC-Cu) to suppress interfacial voids in low-temperature Cu-Cu bonding for 3D IC packaging. We quantitatively compared the void characteristics of electrodeposited NC-Cu (grain size ~89.3 nm) and (111)-oriented nanotwinned Cu (NT-Cu, ~621.8 nm) bonded at 200 °C. Plan-view STEM-HAADF analysis revealed that NC-Cu achieved a much lower void area ratio (1.8%) than NT-Cu (4.0%), attributed to its high grain boundary density, which enhances atomic diffusion and grain boundary migration. At 250 °C, typical Ostwald ripening was observed, with fewer but larger voids. However, a rise in total void area fraction suggests a competing mechanism—possibly new void nucleation at grain boundaries triggered by residual defects from the electroplating process. These results highlight the superior void-mitigating capability of NC-Cu under low thermal budgets. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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| Abstract: | This study investigates the use of nanocrystalline Cu (NC-Cu) to suppress interfacial voids in low-temperature Cu-Cu bonding for 3D IC packaging. We quantitatively compared the void characteristics of electrodeposited NC-Cu (grain size ~89.3 nm) and (111)-oriented nanotwinned Cu (NT-Cu, ~621.8 nm) bonded at 200 °C. Plan-view STEM-HAADF analysis revealed that NC-Cu achieved a much lower void area ratio (1.8%) than NT-Cu (4.0%), attributed to its high grain boundary density, which enhances atomic diffusion and grain boundary migration. At 250 °C, typical Ostwald ripening was observed, with fewer but larger voids. However, a rise in total void area fraction suggests a competing mechanism—possibly new void nucleation at grain boundaries triggered by residual defects from the electroplating process. These results highlight the superior void-mitigating capability of NC-Cu under low thermal budgets. [ABSTRACT FROM AUTHOR] |
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| ISSN: | 19961944 |
| DOI: | 10.3390/ma18163725 |
